A device for plasma etching photoresist

Abstract

The invention discloses a plasma photoresist etching device, which comprises a reaction cavity and a reaction gas source arranged above the reaction cavity, wherein the reaction cavity is internally provided with a base for supporting a substrate; at least one gas distribution plate is arranged above the substrate for enabling the reaction gas to be uniformly distributed on the surface of the substrate; and the gas distribution plate comprises an aluminum or aluminum alloy main body and a protection layer coating the main body. Through arranging the protection layer with a proper thickness outside the aluminum or aluminum alloy main body, the gas distribution plate arranged in the reaction cavity can effectively absorb charged particles in a plasma, consumption of oxygen free radical by the gas distribution plate can also be avoided, and thus, while a high oxygen free radical concentration is kept in the reaction cavity, accumulation of the charged particles on the surface of the substrate is reduced, current on the surface of the substrate is reduced, and the substrate photoresist etching rate can be kept in a high level.

Description

Technical field [0001] The invention relates to a plasma etching photoresist device and the design of its internal components. Background technique [0002] In the semiconductor wafer manufacturing process, photoresist is used to transfer the pattern on the mask to the wafer to achieve the purpose of etching the substrate according to the design on the mask. When the substrate etching process is completed, it is usually necessary The photoresist is stripped from the wafer surface for the next process. [0003] In the prior art, a plasma processing device for removing photoresist usually includes a reaction chamber and a reaction gas source arranged above the reaction chamber. The reaction gas in the reaction gas source mainly includes oxygen, and the oxygen is dissociated into Plasma, the use of oxygen radicals in the plasma can effectively remove the photoresist on the surface of the substrate. In order to ensure that the oxygen dissociated plasma and the undissociated reaction ...

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Problems solved by technology

[0004] In the prior art, the material of the gas distribution plate is an important factor affecting the plasma distribution and concentration. If the gas distribution plate cannot absorb the charged particles in the plasma, the charged particles will gather on the surface of the substrate, making the surface of the substrate There is a large current, which reduces the etching rate; if the gas distribution plate can absorb both charged particles and neutral free radicals, the concentration of raw materials participating in the etching reaction in the reaction chamber will decrease, resulting in the photoresist etching of the substrate. Process rate reduction

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