Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of creating pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics

An impact-resistant and fruit-stalk technology, applied in the field of plant genetics and breeding, can solve problems such as research on impact-resistant breeding without pumpkin fruit stalk, and achieve the effects of avoiding selfing decline, an effective breeding method, and a sweet taste.

Inactive Publication Date: 2017-07-21
HUNAN VEGETABLE RES INST
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no breeding research on impact resistance of pumpkin fruit stalks in this field.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of creating pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics
  • Method of creating pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics
  • Method of creating pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The first step, hybridization: using the natural mutant plant 29-2 (common in character and impact-resistant fruit stem) found in the Hainan field as the female parent, and the high-generation inbred line 97-6-5 ( excellent traits, ordinary fruit stalk) as the male parent, crossed to obtain F 1 generation. Income F 1 The comprehensive traits and the anti-impact traits of fruit stalks of the pumpkin were basically between the male parent and the female parent. f 1 The phenotypes of the generations were consistent.

[0034] The second step, self-crossing and backcrossing: the F 1 5 generation plants were planted in the field, cultivated in trellises, and self-crossed to obtain F 2 generation; the F 2 Generation 60 plants are planted in the field, and the fruit stalks can be seen when they bloom, F 2 The offspring plants were characterized by segregation, and the anti-collision individual plants with fruit stalks were selected for backcrossing with ordinary pumpkin ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method of creating pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics, comprising the steps of first, hybridizing a pumpkin single plant, as a female parent, having good pedicel impact resistance but limited comprehensive characteristics and a pumpkin single plant, as a male parent, having good comprehensive characteristics and common pedicels to obtain F1 generation; second, selfing the F1 generation to obtain F2 generation, backcrossing single plants with good pedicel impact resistance from the F2 generation with the male parent, the pumpkin single plant, and harvesting seeds from the pumpkin single plant material having good comprehensive characteristics to obtain BC1F1 generation; third, subjecting single plants having good pedicel impact resistance from the BC1F1 generation to intra-plant selfing in three generations, then performing intra-line sister-crossing in one generation and intra-plant selfing in one generation to obtain stable a pumpkin selfing line having stable comprehensive characteristics and good pedicel impact resistance. The method has the advantages that pumpkin germplasm resources having good pedicel impact resistance and good comprehensive characteristics are acquired for the first time and the market blank is filled.

Description

technical field [0001] The invention relates to the field of plant genetics and breeding, in particular to a method for creating pumpkin germplasm resources with impact-resistant fruit stalks and excellent comprehensive properties. Background technique [0002] Chinese pumpkin (C.moschata.Duchesne, 2n=40) is one of the four cultivars of the genus Cucurbita. nutritional value, medicinal value and economic value. my country is a major producer and consumer of pumpkins. At present, the planting area of ​​pumpkins in China is about 400,000 hectares, and the largest planting area in the country is formed in the Dongting Lake area of ​​Hunan Province, which plays an important role in ensuring the supply of pumpkins in the national market. [0003] The stalk of Chinese pumpkin is long and thin, the texture is hard, and the base is swollen and pentagonal, showing that the stalk protrudes from the pulp (see image 3 ), which are easy to fall off during picking and transportation, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): A01H1/02A01H1/04
CPCA01H1/02A01H1/04
Inventor 韩小霞胡新军李勇奇粟建文袁祖华
Owner HUNAN VEGETABLE RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com