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A kind of diffusion device and deposition chamber

A diffusion device and diffusion plate technology, applied in the field of diffusion devices and deposition chambers, can solve the problems of low uniformity of deposition film thickness, difficult position adjustment, short service life, etc., achieve uniform thickness, improve stability and good The effect of uniform rate and distribution density

Active Publication Date: 2019-09-17
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, a single-layer gas diffusion plate 1 is used to adjust the distribution density of the process gas plasma in the deposition chamber 8, and the single-layer gas diffusion plate 1 is provided with evenly distributed through holes, and through the single-layer gas diffusion plate 1 After adjustment, the edge film thickness and the middle film thickness of the film deposited on the glass substrate still show obvious differences, resulting in low uniformity of the overall deposited film thickness
In addition, the single-layer gas diffusion plate 1 has an integrated structure, and its weight is relatively heavy, so it is difficult to adjust its position. After the single-layer gas diffusion plate 1 is damaged, it can only be replaced and repaired as a whole, resulting in its actual cumulative use. The cycle is shorter and the maintenance cost is higher

Method used

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  • A kind of diffusion device and deposition chamber
  • A kind of diffusion device and deposition chamber
  • A kind of diffusion device and deposition chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides a diffusion device for diffusing the gas passing through it, such as figure 2 and image 3 As shown, it includes: at least two diffuser plates 1, at least two diffuser plates 1 are spaced from each other and overlapped correspondingly, each diffuser plate 1 is provided with a plurality of through holes 11, and the distance between the diffuser plates 1 The distribution density of the through holes 11 on the diffuser plate 1 can correspond to the distribution density of the gas distributed on the gas inlet side of the diffuser, so that the gas passing through the diffuser can be output uniformly.

[0035] Wherein, the spacing between the diffusion plates 1 and the distribution density of the through holes 11 on the diffusion plate 1 can correspond to the distribution density of the gas distributed on the gas inlet side of the diffusion device means: The distribution density of the gas on the side is adjusted accordingly to the spacing between t...

Embodiment 2

[0044] This embodiment provides a diffusion device, and the difference from Embodiment 1 is that, as Figure 6 As shown, the multiple sub-diffusers 10 of each diffuser 1 are located on the same plane, and the multiple sub-diffusers 10 are seamlessly spliced.

[0045] In this embodiment, the distribution density of the through holes 11 on each sub-diffuser plate 10 spliced ​​to form the entire diffuser plate 1 is the same.

[0046] It should be noted that the distribution density of through holes 11 on any two adjacent diffuser plates 1 may be the same or different, therefore, the distance between any two adjacent diffuser plates 1 may be equal or unequal, so It is also possible to make the distribution density of the gas passing through the diffusion device more uniform through the selection of the distribution density of the through holes 11 on two adjacent diffusion plates 1 and the adjustment of the distance between the two diffusion plates 1, so that the deposition The th...

Embodiment 3

[0049] This embodiment provides a diffusion device, which is different from Embodiment 1-2, such as Figure 7 As shown, the diffusion plates 1 are parallel to each other, and the positions of the through holes 11 in any two adjacent diffusion plates 1 are staggered from each other. Figure 7 The diffusion device shown in exemplifies two diffusion plates 1 .

[0050] Other structures of the diffusion device in this embodiment are the same as those in Embodiment 1 or 2, and will not be repeated here.

[0051] By staggering the positions of the through-holes 11 in any two adjacent diffuser plates 1, the gas passing through the diffuser plate 1 can also be output more uniformly after combing through the through-holes 11 in a plurality of diffuser plates 1, so that the deposition The thickness of the film layer on the substrate is more uniform.

[0052] Beneficial effects of embodiment 1-3: the diffusion device provided in embodiment 1-3, by setting at least two diffusion plates,...

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Abstract

The invention provides a diffusion device and a deposition chamber. The diffusion device is used for diffusing gas passing through the diffusion device and comprises at least two diffusion plates. The at least two diffusion plates are spaced from each other and are overlapped correspondingly. Each diffusion plate is provided with a plurality of through holes. The distance between the diffusion plates and the distribution density of the through holes in the diffusion plates are matched with the distribution density of gas distributed on the gas inlet side of the diffusion device, so that gas passing through the diffusion device is output uniformly. According to diffusion device, at least two diffusion plates are arranged, and the distance between the diffusion plates and the distribution density of the through holes in the diffusion plates are matched with the distribution density of gas on the gas inlet side of the diffusion device, so that the distribution density of the gas passing through the diffusion device is made more uniform, and the thickness of a film deposited on a substrate is made more even. The stability and yield of a product formed by depositing the film on the substrate are improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a diffusion device and a deposition chamber. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD, Plasma Enhanced Chemical VaporDeposition) uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma chemical activity is very strong and it is easy to react. The desired film is deposited on the wafer. The plasma-enhanced chemical vapor deposition equipment is mainly composed of a loading chamber, a transfer chamber and a process deposition chamber. The loading chamber is mainly used to exchange glass substrates for thin film deposition with an atmospheric vacuum robot. The transfer chamber is mainly used for The glass substrate is transferred to the process chamber under vacuum conditions, and the process deposition chamber is mainly used to deposit process films on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/50
Inventor 张文波郭如旺储明明张锐郑文灏
Owner BOE TECH GRP CO LTD