Electrostatic discharge protective structure and formation method therefor

Abstract

Disclosed are an electrostatic discharge protective structure and a formation method therefor. The electrostatic discharge protective structure comprises a substrate, a first gate structure, a first doping region, a second doping region, a first conductive structure, a second conductive structure, and a first heat dissipation structure, wherein fin parts are formed on the surface of the substrate; the first gate structure transversely crosses the fin parts; the first doping region is positioned in the fin parts on one side of the first gate structure; the second doping region is positioned in the fin parts on the other side of the first gate structure; the first conductive structure is positioned on the surface of the first doping region; the second conductive structure is positioned on the surface of the second doping region; and the first heat dissipation structure is positioned on the first gate structure and is in contact with the first gate structure. By means of setting the first heat dissipation structure which is in contact with the first gate structure on the first gate structure, the heat on the first gate structure can be exported, so that the heat of the first gate structure can be dissipated through heat conduction of the heat dissipation structure; and therefore, the problem of self-heating of the electrostatic discharge protective structure is relieved, and the performance of the electrostatic discharge protective structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic discharge protection structure and a forming method thereof. Background technique [0002] As semiconductor chips are used more and more widely, there are more and more factors that cause semiconductor chips to be damaged by static electricity. In existing chip designs, electrostatic discharge (ESD, Electrostatic Discharge) protection circuits are often used to reduce chip damage. The design and application of existing electrostatic discharge protection circuits include: gate grounded N-type field effect transistor (Gate Grounded NMOS, GGNMOS for short) protection circuit, silicon controlled rectifier (SCR for short) protection circuit, lateral diffusion field effect Transistor (Laterally Diffused MOS, LDMOS for short) protection circuit, Bipolar Junction Transistor (Bipolar Junction Transistor, BJT for short) protection circuit, etc. [0003] With th...

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Problems solved by technology

[0003] With the development of semiconductor technology, the size of semiconductor devices has been continuously reduced and the device density has been continuously increased. The existing technology has developed fin field effect transistors, but the electrostatic discharge protection structure in fin field effect transistors has the problem of unstable performance.

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