Method for increasing accuracy of non-silication resistance model and non-silication resistance model
A resistor model and resistor technology, which is applied in electrical digital data processing, design optimization/simulation, special data processing applications, etc., can solve the problem of low accuracy of non-silicide resistor models, and achieve the effect of improving model accuracy and improving scalability
Active Publication Date: 2017-08-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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It can be seen that the terminal resistance Rend of the non-silicide resistor also includes the silicide resistor, and the test data based on the semiconductor integrated circuit in the prior art extracts the model data separately for the non-silicide resistor and the silicide resistor, and the non-silicide resistor model and the silicide resistor model There is no correlation between them, resulting in low accuracy of the non-silicide resistance model
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[0031] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings. However, the present invention can be implemented in different forms and should not be limited to the described embodiments.
[0032] The core idea of the method for improving the accuracy of the unsalicide resistance model (model) of the present invention is to subdivide the termination resistance Rend in the original unsalicide resistance model into contact resistance Rct, silicide resistance Rsa and junction resistance Rin For the corresponding silicide resistance model and unsalicide resistance model, the Rct part is the same, and the silicide resistance square resistivity is the same , so Rsa and Rct can be obtained in the silicide resistance model to be applied to the non-silicide resistance model, so that the non-silicide resistance m...
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The invention provides a method for increasing accuracy of a non-silication resistance model and the non-silication resistance model. The method comprises the steps that terminating resistors of lead-out ends on two ends of the resistance model are divided into three parts composed of contact resistance, silication resistance and junction resistance; by a silication resistance model, the silication resistance and the contact resistance of the non-silication resistance model can be solved, and the junction resistance can then be solved, so that correlation between the non-silication resistance model and the silication resistance model can be established, the non-silication resistance model becomes more physical and model accuracy is greatly increased. Meanwhile, a layout parameters, namely the distance between a contact hole and the boundary of a silication resistance area, is introduced to the silication resistance of the non-silication resistance model, so that expansibility of the non-silication resistance model can be enhanced.
Description
technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for improving the accuracy of a non-silicide resistance model and a non-silicide resistance model. Background technique [0002] In the current semiconductor industry, the use of modeling and simulation technology to study the performance of semiconductor devices and circuits in semiconductor integrated circuits has been paid more and more attention by people in the industry. Resistance is one of the most basic components in semiconductor integrated circuit circuits. There are many types, such as N+ silicide polysilicon resistor (N+POLY salicide resistor), P+ silicide polysilicon resistor (P+POLY salicide resistor), N+ silicide diffusion resistor (N +diffusion salicide resistor), P+ silicide diffusion resistor (P+diffusion salicide resistor) and other silicide resistors and N+ non-silicide polysilicon resistor (N+POLY unsalicide resistor), P+ no...
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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 张志双张昊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP