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Systems and methods for preparing gan and related materials for micro assembly

A technology of micro-assembly and epitaxy materials, which is used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc.

Active Publication Date: 2017-08-18
X DISPLAY CO TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no available method for undercutting chiplets formed on sapphire substrates to achieve chiplet release for microtransfer printing

Method used

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  • Systems and methods for preparing gan and related materials for micro assembly
  • Systems and methods for preparing gan and related materials for micro assembly
  • Systems and methods for preparing gan and related materials for micro assembly

Examples

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Embodiment Construction

[0053] figure 1 is a flowchart of an example method 100 for fabricating a releasable GaN device from a silicon substrate. In some embodiments, GaN and related (eg, AlGaN, InGaN, InGaAlN, SiN) materials (102) are prepared by epitaxial growth on a Si (111) substrate. The device (104) may be at least partially formed in the GaN material, for example, by additional patterning of dielectric or conductive thin film material (104). The releasable structure is demarcated in the epitaxial material, thereby partially exposing the Si (111) substrate (106). Releasable structures are formed in a source or homogeneous wafer substrate and can be released or removed from the wafer by bringing the structure into physical contact with a patterned stamp (e.g., an elastomeric stamp), placing The structure is adhered to the stamp, and the stamp and the structure are removed from the wafer. This process is facilitated by partially separating the releasable structure from the wafer (by etching t...

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PUM

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Abstract

The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high- voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.

Description

[0001] Related applications [0002] This application claims priority and benefit to U.S. Provisional Patent Application No. 62 / 014,070, filed June 18, 2014, entitled "Systems and Methods for Fabricating GaN and Related Materials for Microassembly," The contents of said US Provisional Patent Application are incorporated herein by reference in their entirety. technical field [0003] The present invention relates to structures and methods for providing microscale devices that can be printed using massively parallel microtransfer printing methods. Background technique [0004] The disclosed technology generally relates to the formation of transferable microdevices. Semiconductor chip or die automated assembly equipment typically uses a vacuum-operated placement head, such as a vacuum gripper or a pick-and-place tool, to pick up and apply devices to a substrate. Picking and placing ultra-thin and / or small devices using this technique is often difficult. Microtransfer printi...

Claims

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Application Information

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IPC IPC(8): H01L21/78H01L23/00H01L25/00H01L33/00H01L33/22H01L33/44
CPCH01L21/7806H01L24/81H01L25/50H01L33/007H01L33/22H01L33/44H01L2224/81805H01L2924/00011H01L2924/00H01L2924/13055H01L2933/0025H01L33/0093H01L21/6835H01L2221/68354H01L2221/68368H01L33/52H01L2924/12041H01L21/2007H01L21/187
Inventor 克里斯托弗·鲍尔马修·迈托
Owner X DISPLAY CO TECH LTD