Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A photovoltaic cell and a method of forming a photovoltaic cell

A photovoltaic cell and battery technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of low battery efficiency, lower open circuit voltage and fill factor, gaps, etc.

Active Publication Date: 2017-08-18
NEWSOUTH INNOVATIONS PTY LTD +1
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

7% conversion efficiency, there is still a gap
This reduces the open circuit voltage and fill factor and affects the efficiency of the cell
Another cause of low battery efficiency is the electronic band configuration of copper-zinc-tin-sulfur batteries

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A photovoltaic cell and a method of forming a photovoltaic cell
  • A photovoltaic cell and a method of forming a photovoltaic cell
  • A photovoltaic cell and a method of forming a photovoltaic cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0074] Embodiments of the present invention are described in detail below in conjunction with accompanying drawings:

[0075] Embodiments of the present invention relate to photovoltaic cells having copper-based light absorbing materials such as copper zinc tin sulfur absorber layers, cadmium sulfide, and metal electrodes. In particular, embodiments of the present invention relate to photovoltaic cells of various configurations with an interlayer material between the light absorbing material and the cadmium sulfide. Photovoltaic cells can be deposited on glass substrates, stainless steel, flexible polyimide, or metal foils.

[0076] In certain embodiments, the interlayer material reduces recombination of photogenerated carriers at the copper-zinc-tin-sulfur / cadmium-sulfide interface by passivating the first surface of the light-absorbing layer portion. The recombination of photogenerated carriers is minimized in the passivated part. A P-n junction is formed on the second sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The present disclosure provides a photovoltaic device comprising a copper-based light-absorbing material and a first material electrically coupled to the light-absorbing material and forming a p-n junction with the light- absorbing material. The device further comprises an intermediate material arranged between the first material and the light-absorbing material. The intermediate material acts to reduce the minority carrier recombination rate at the region between the light-absorbing material and the first material and / or optimise the electronic band alignment in the photovoltaic device.

Description

technical field [0001] The present invention relates to a photovoltaic cell and a method of manufacturing the photovoltaic cell, such as a cell based on a copper-based light-absorbing material. [0002] technical background [0003] Some copper-based alloy compounds can be used as light-absorbing materials in thin-film solar cells due to their suitable properties. Copper-based chalcogenides, such as CuZnSnS, have direct energy band gaps that can match the solar spectrum. [0004] Copper zinc tin sulfur is a quaternary compound containing copper (Cu), zinc (Zn), tin (Sn), sulfur (S) or selenium (Se). The chemical formula of copper zinc tin sulfur is Cu2ZnSn(S,Se)4. According to the different chalcogen elements, the abbreviation of copper zinc tin sulfur is also different. For example, the chalcogen element is sulfur, which is abbreviated as CZTS, selenium is CZTSe, and sulfur selenium is CZT(S,Se). All three abbreviations refer to copper zinc tin sulfur. The copper-zinc-ti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0749
CPCH01L31/0326H01L31/072Y02E10/541
Inventor 刘芳洋郝晓静
Owner NEWSOUTH INNOVATIONS PTY LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com