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Diffusion technology for crystalline silica solar cell

A technology of solar cells and diffusion process, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of adverse effects of open circuit voltage and short circuit current, lower photoelectric conversion efficiency of cells, and poor uniformity of sheet resistance, etc. Reduce surface compounding and good uniformity

Active Publication Date: 2017-08-22
北京捷宸阳光科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The conventional diffusion process is generally one-step diffusion. The defects of this process are poor uniformity of sheet resistance, poor control of junction depth, and

Method used

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  • Diffusion technology for crystalline silica solar cell
  • Diffusion technology for crystalline silica solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] (1) Entering the boat: Put the silicon wafer into the diffusion furnace, set the temperature of the furnace tube at 790°C, and feed nitrogen gas at 15000 sccm.

[0054] (2) Heating: Rapidly raise the temperature to 800° C., and feed nitrogen gas at 15,000 sccm.

[0055] (3) Constant temperature: heat preservation at 800° C., and 15000 sccm of nitrogen gas is passed through.

[0056] (4) Oxidation: Oxidation was carried out at 800° C., 15000 sccm of nitrogen gas and 1000 sccm of oxygen gas were passed through for 300 s.

[0057] (5) Diffusion in the first step: heating up diffusion, the center temperature is 810°C, carrying phosphorus source nitrogen 880sccm, oxygen 600sccm, nitrogen 13500sccm, time 360s.

[0058] (6) The first step of propulsion: constant temperature propulsion, the center temperature is 810°C, the nitrogen gas is 15000 sccm, and the time is 300s.

[0059] (7) The second step of diffusion: heating up diffusion, the center temperature is 820°C, carryin...

Embodiment 2

[0068] (1) Entering the boat: Put the silicon wafer into the diffusion furnace, set the temperature of the furnace tube at 790°C, and feed nitrogen gas at 15000 sccm.

[0069] (2) Heating: Rapidly raise the temperature to 800° C., and feed nitrogen gas at 15,000 sccm.

[0070] (3) Constant temperature: heat preservation at 800° C., and 15000 sccm of nitrogen gas is passed through.

[0071] (4) Oxidation: Oxidation was carried out at 800° C., 15000 sccm of nitrogen gas and 1000 sccm of oxygen gas were passed through for 300 s.

[0072] (5) Diffusion in the first step: heating up diffusion, the central temperature is 810°C, carrying phosphorus source nitrogen 840sccm, oxygen 600sccm, nitrogen 13500sccm, time 360s.

[0073] (6) The first step of propulsion: constant temperature propulsion, the center temperature is 810°C, the nitrogen gas is 15000 sccm, and the time is 300s.

[0074] (7) The second step of diffusion: heating up diffusion, the center temperature is 820°C, carryi...

Embodiment 3

[0084] (1) Entering the boat: Put the silicon wafer into the diffusion furnace, set the temperature of the furnace tube at 790°C, and feed nitrogen gas at 15000 sccm.

[0085] (2) Heating: Rapidly raise the temperature to 800° C., and feed nitrogen gas at 15,000 sccm.

[0086] (3) Constant temperature: heat preservation at 800° C., and 15000 sccm of nitrogen gas is passed through.

[0087] (4) Oxidation: Oxidation was carried out at 800° C., 15000 sccm of nitrogen gas and 1000 sccm of oxygen gas were passed through for 300 s.

[0088] (5) The first step of diffusion: heating up diffusion, the center temperature is 810°C, carrying phosphorus source nitrogen 820sccm, oxygen 600sccm, nitrogen 13500sccm, time 360s.

[0089] (6) The first step of propulsion: constant temperature propulsion, the center temperature is 810°C, the nitrogen gas is 15000 sccm, and the time is 300s.

[0090] (7) The second step of diffusion: heating up diffusion, the center temperature is 820°C, carryin...

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Abstract

The invention discloses a diffusion technology for a crystalline silica solar cell. The technology comprises three diffusion-propulsion steps, the central temperature of the first diffusion and propulsion is 810 DEG C, the central temperature of the second diffusion and propulsion is 820 DEG C and the central temperature of the third diffusion and propulsion is 830 DEG C and nitrogen with a phosphor source is input in each diffusion step. According to the invention, the high square resistance of 90-100ohm/sq under a four-point test condition is realized, the uniformity of five-point test is higher, the junction depth is reduced effectively, surface recombination is reduced, the open-circuit voltage and short-circuit current of the cell can be improved effectively by combining a proper screen printing technology, and the absolute value of the cell efficiency is improved by 0.1% at least. The technology is simple in operation, the production cost is not increased, and the cell is easy to industrial popularization.

Description

technical field [0001] The invention belongs to the diffusion process of crystalline silicon cells in the field of photovoltaics, and relates to a diffusion process for crystalline silicon solar cells. Background technique [0002] The basic technological process of crystalline silicon solar cells is texturing-diffusion-etching-coating-printing-sintering-testing. Diffusion plays a vital role in the entire process. The power generation principle of solar cells is the photovoltaic effect, and the diffusion creates a PN junction, which is the key structure of photovoltaics. The diffusion process determines the structure of the PN junction and the surface state of the silicon wafer, which will ultimately affect the photoelectric conversion efficiency of the cell. Diffusion can be achieved by thermal diffusion, ion implantation, laser, epitaxy, and high-frequency electrical implantation. At present, the industrialized diffusion process is thermal diffusion, which uses nitrogen...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186Y02E10/547Y02P70/50
Inventor 张华灿赵钊刘德臣王军顾艳杰
Owner 北京捷宸阳光科技发展有限公司