Supercharge Your Innovation With Domain-Expert AI Agents!

Flash memory

A technology of flash memory and data, which is applied in the field of high-efficiency programming flash memory, and can solve the problem of slow reading speed of flash memory

Inactive Publication Date: 2017-08-25
合肥仁德电子科技有限公司
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the invention is to solve the problem of slow reading speed of flash memory in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1: a flash memory, comprising a serial-to-parallel conversion circuit for receiving serial data and a data judger connected to the output of the serial-to-parallel conversion circuit, the data judger includes a digital-to-analog converter, a level A shifter and a reverse circuit, the digital-to-analog converter is connected to the output end of the serial-to-parallel conversion circuit, the level shifter is connected to the output end of the digital-to-analog converter, and is used for level-shifting the initial control signal Outputting the reverse control signal, the serial-to-parallel conversion circuit converts the serial data into parallel data, and the data judger generates a reverse control signal through the parallel data, and under the control of the reverse control signal After the parallel data is processed in reverse, a reverse parallel data is output to the flash memory chip.

Embodiment 2

[0014] Embodiment 2: a flash memory, including a serial-to-parallel conversion circuit for receiving serial data and a data judger connected to the output of the serial-to-parallel conversion circuit, the data judger includes a digital-to-analog converter, a level A shifter and a reverse circuit, the digital-to-analog converter is connected to the output end of the serial-to-parallel conversion circuit, the level shifter is connected to the output end of the digital-to-analog converter, and is used for level-shifting the initial control signal Outputting the reverse control signal, the serial-to-parallel conversion circuit converts the serial data into parallel data, and the data judger generates a reverse control signal through the parallel data, and under the control of the reverse control signal After the parallel data is processed in reverse, a reverse parallel data is output to the flash memory chip. The input terminal of the reverse circuit is connected to the output term...

Embodiment 3

[0015] Embodiment 3: A flash memory, comprising a serial-to-parallel conversion circuit for receiving serial data and a data judger connected to the output of the serial-to-parallel conversion circuit, the data judger includes a digital-to-analog converter, a level A shifter and a reverse circuit, the digital-to-analog converter is connected to the output end of the serial-to-parallel conversion circuit, the level shifter is connected to the output end of the digital-to-analog converter, and is used for level-shifting the initial control signal Outputting the reverse control signal, the serial-to-parallel conversion circuit converts the serial data into parallel data, and the data judger generates a reverse control signal through the parallel data, and under the control of the reverse control signal After the parallel data is processed in reverse, a reverse parallel data is output to the flash memory chip. The reverse circuit includes an inverter and a multiplexer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory. The flash memory comprises a serial-to-parallel conversion circuit and a data judgement device, wherein the serial-to-parallel conversion circuit is used for receiving serial data; and the data judgement device is connected with an output end of the serial-to-parallel conversion circuit. The flash memory has the beneficial effect of solving the problem that the flash memory reading speed is slow in the prior art.

Description

technical field [0001] The invention relates to a flash memory, in particular to a high-efficiency programming flash memory. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers, and USB flash drives. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electrically erasable and programmable read...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/30
CPCG11C16/26G11C16/30
Inventor 李阳
Owner 合肥仁德电子科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com