Cathode magnetic control sputtering target device

Abstract

The invention discloses a cathode magnetic control sputtering target device which comprises a magnetic target material and magnets arranged on the back face of the magnetic target material. The front of the magnetic target material is provided with a rectangular annular groove. The back face of the magnetic target material is provided with a rectangular annular protrusion corresponding to the rectangular annular groove. The magnets comprise a center magnet and outer magnets which are opposite in polarity. The center magnet is arranged in the center of the rectangular annular protrusion. The four outer magnets are arranged on the periphery of the rectangular annular protrusion. The cathode magnetic control sputtering target device has the beneficial effects of being capable of reinforcing magnetic field strength of the surface of the target material, improving uniformity of sputtering of the target material, reducing frequency of replacing the target material, reducing the production cost and the like.

Description

technical field [0001] The invention relates to magnetron sputtering coating equipment, in particular to a cathode magnetron sputtering target device. Background technique [0002] Magnetic materials are often coated by magnetron sputtering. For example, in the field of magnetic recording represented by hard disk drives, as the material of the magnetic thin film responsible for recording, it is a material based on Co, Fe or Ni, which is a ferromagnetic metal. [0003] Magnetron sputtering coating is to install a magnet on the back side of the target in a vacuum chamber so that a closed magnetic field is generated on the surface of the target along the direction perpendicular to the electric field. The closed magnetic field interacts with the electric field to make the electrons close on the target surface. The magnetic field runs in a spiral shape. During the movement, the electrons collide with the atoms of the inert gas passing into the vacuum chamber, causing them to ion...

AI Technical Summary

Problems solved by technology

The magnetic permeability of the magnetic material is large, and the magnetic flux density on the surface of the target is reduced, so that the closed magnetic field formed on the surface of the target is very small, and even the closed magnetic field cannot be formed on the discharge surface of the magnetic target. Correspondingly, the movement range of the electrons is small , as the sputtering progresses, the magnetic field lines are locally concentrated on the target surface, so the expansion of the plasma becomes smaller, the deposition rate decreases, and the sputtering efficiency decreases. At the same time, the erosion area is small, and only a small part of the target is sputtered. Material usage efficiency is relatively low

Images