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De-embedding method of small signal measurement

A small signal, measurement technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve problems such as excessive de-embedding, and achieve the effects of convenient production, convenient calculation process, and simple structure

Active Publication Date: 2017-09-15
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing method of de-embedding can measure and extract the S scattering parameter data of the device, but for devices with holes, the short-circuit de-embedding part includes part of the device with holes, resulting in excessive de-embedding

Method used

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  • De-embedding method of small signal measurement
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  • De-embedding method of small signal measurement

Examples

Experimental program
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Effect test

Embodiment 1

[0035] see figure 1 As shown, a de-embedding method for small signal measurement of the present invention includes the following steps:

[0036] Step 1, forming a measuring structure of the DUT, a through-cut insert and an open-circuit insert. Specifically, such as figure 2 As shown, the measurement structure of the DUT includes a DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad plate G3, the fourth ground pad G4, the first ground back hole V1 and the second ground back hole V2, the signal input pad S1 is connected to the input end of the DUT through the wiring metal M1, the signal The output pad S2 is connected to the output end of the DUT through the wiring metal M2, the first ground back hole V1 is connected to the ground end of the DUT under test through the wiring metal M3, and the second ground back hole V1 is connected to the ground terminal of the DUT under test through the wiring metal M3. The ho...

Embodiment 2

[0054] Step 1, forming a measuring structure of the DUT, a through-cut insert and an open-circuit insert. Specifically, such as figure 2 As shown, the measurement structure of the DUT includes a DUT, a signal input pad S1, a signal output pad S2, a first ground pad G1, a second ground pad G2, a third ground pad plate G3, the fourth ground pad G4, the first ground back hole V1 and the second ground back hole V2, the signal input pad S1 is connected to the input end of the DUT through the wiring metal M1, the signal The output pad S2 is connected to the output end of the DUT through the wiring metal M2, the first ground back hole V1 is connected to the ground end of the DUT under test through the wiring metal M3, and the second ground back hole V1 is connected to the ground terminal of the DUT under test through the wiring metal M3. The hole V2 is connected to the ground terminal of the DUT through the wiring metal M4. Such as image 3 As shown, the straight-through removing ...

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Abstract

The invention discloses a de-embedding method of small signal measurement. The method comprises steps of forming a to-be-measured piece measurement structure, a through de-embedding piece and an open-circuit de-embedding piece; testing and extracting S scattering parameters of the to-be-measured piece measurement structure, the open-circuit de-embedding piece and the through de-embedding piece respectively; extracting S scattering parameters of an equivalent short-circuit de-embedding piece from the S scattering parameters of the through de-embedding piece through an algorithm; converting the S scattering parameters of the open-circuit de-embedding piece into Y admittance parameters; converting the S scattering parameters of the equivalent short-circuit de-embedding piece into Z impedance parameters; converting the S scattering parameters of the to-be-measured piece measurement structure into Y admittance parameters and Z impedance parameters, and carrying out matrix calculation on the Y admittance parameters and the Z impedance parameters and response parameters of the open-circuit de-embedding piece and the equivalent short-circuit de-embedding piece so as to obtain de-embedded S scattering parameters. According to the invention, for a hole-carrying device, by use of the method, excessive de-embedding in measurement results in a de-embedding process of a short-circuit de-embedding piece can be avoided.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit measurement, in particular to a de-embedding method for small signal measurement. Background technique [0002] In RF (radio frequency) measurement, the reference end face of the measurement is first moved to the tip of the probe through calibration, and then moved to the end face of the device through de-embedding. When de-embedding, only with accurate and reasonable end faces can the S-scattering parameter data of the device be measured and extracted. Unreasonable end face positions will add parasitic effects such as wiring to the result or deduct the original small signal characteristics of the device. The current commonly used method of de-embedding is based on two de-embedding components, open circuit and short circuit, as shown in the attached figure 2 , 4 and 5. Specifically, a measuring structure of the DUT, a straight-through de-insert and an open-circuit de-insert are ...

Claims

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Application Information

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IPC IPC(8): G01R31/28
CPCG01R31/2851
Inventor 张永明李斌彭俊益
Owner XIAMEN SANAN INTEGRATED CIRCUIT
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