Surface treatment method of semiconductor wafer

Abstract

The invention relates to a surface treatment method of a semiconductor wafer. A wet chemical surface treatment method is mainly adopted, wherein the semiconductor wafer is processed by an acid liquid; at most 10-micron material is removed from each surface of the semiconductor wafer; and then, at least enough material is removed by an alkali liquid, so as to completely remove a crystal region which is mechanically processed and damaged previously.

Description

technical field [0001] The invention relates to a method for carrying out the wet-chemical surface treatment of semiconductor wafers by means of a series of treatment steps, in which liquids act on the surface of the semiconductor wafer. Background technique [0002] Due to the increasing miniaturization requirements in the manufacture of electronic components, higher demands are placed on the surface quality of semiconductor materials, especially silicon, which is usually used in wafer form, not only in terms of the geometric quality of the surface, but also in terms of its purity , chemical conditions and free of particles and spots. [0003] In order that these parameters can be influenced and controlled in a reproducible manner, wet-chemical surface treatments have been developed, especially after mechanical surface treatments such as grinding, lapping or polishing. Wet chemical surface treatment methods are related to the removal of surface materials, also known as etc...

AI Technical Summary

Problems solved by technology

However, even these combined methods still do not fully meet the increasing demands on semiconductor wafer geometries and the absence of metals therein, in particular, although increased material removal by alkaline etching at the expense of acidic etching can lead to wafer geometries improvement, but has an adverse effect on the removal of metal impurities and vice versa

Furthermore, increased material removal by alkaline etching can result in a more pronounced alkaline etched structure, which typically results in increased roughness values