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Overvoltage protection structure

A technology of overvoltage protection and voltage clamping, which is applied in the direction of emergency protection circuit devices, emergency protection circuit devices, and electrical components for limiting overcurrent/overvoltage, and can solve the problem of being unable to cope with the thinning and integration of mobile terminal products Application requirements, high-voltage IC manufacturing process compatibility and other issues, to achieve good protection effect and universality, easy to integrate, and achieve the effect of electrical overstress protection

Pending Publication Date: 2017-09-26
DIOO MICROCIRCUITS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when manufacturing TVS tube devices, there are special requirements for the substrate, epitaxial layer concentration, and even electron irradiation process, etc., and it is difficult to be compatible with the high-voltage IC manufacturing process. Therefore, it is basically not feasible to integrate TVS and circuit IC at present. , so the protection scheme using an external TVS tube device in the prior art cannot meet the continuous thinner and more integrated application requirements of mobile terminal products

Method used

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Embodiment Construction

[0034] The implementation of the present invention is described below with specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments.

[0035] see figure 1 , figure 1 It is a schematic diagram of the circuit structure of the embodiment of the overvoltage protection structure of the present invention. As shown in the figure, the overvoltage protection structure 1 of the present invention is applied in an integrated circuit, and is arranged between the pin 2 that needs overvoltage protection and the internal circuit 3 to be protected. The overvoltage protection structure 1 includes overvoltage protection Tube 10, RC coupling circuit 11 and voltage clamping circuit 12.

[0036] The drain of the overvoltage protection tube 10 is connected to the pin 2, which is an...

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Abstract

The invention provides an overvoltage protection structure, and the structure is used in an integrated circuit. The structure comprises an overvoltage protection tube, an RC coupling circuit, and a voltage clamping circuit. A drain electrode of the overvoltage protection tube serves as an input end, and a source electrode is grounded. The RC coupling circuit comprises a resistor, wherein one end of the resistor is grounded, and the other end of the resistor is connected to a grid electrode of the overvoltage protection tube. The voltage clamping circuit is connected between the grid and drain electrodes of the overvoltage protection tube, and comprises at least one diode in positively-biased series connection. The structure has the capabilities of electrostatic discharge and electric overstress protection.

Description

technical field [0001] The invention relates to an overvoltage protection structure, in particular to an overvoltage protection structure in an integrated circuit. Background technique [0002] Electrostatic discharge (ESD) and electrical overstress (EOS) are currently the two main causes of IC failure. ESD refers to the discharge of accumulated charge energy at a speed of ns level, which may form an instantaneous high-voltage and large-current impact. The EOS is relatively longer, mainly due to overvoltage and electrical surge shocks at the ms level. For ESD and EOS protection schemes, the transient voltage generated by ESD or EOS is basically clamped within the range that the device can withstand, and the ESD or EOS current is discharged through the overvoltage protection tube. [0003] In the prior art, protection devices such as external transient voltage suppressor diodes (TVS) are generally used to protect integrated circuit chips. However, when manufacturing TVS tu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
CPCH02H9/041
Inventor 吕宇强
Owner DIOO MICROCIRCUITS CO LTD