Current mode rm or non-exclusive or unit circuit based on finfet transistor
A unit circuit, current mode technology, applied in the direction of logic circuits with logic functions, etc., can solve the problems of increased power consumption, circuit area, delay and power consumption delay product, etc., to reduce area and power consumption. And the power consumption delay product is small, the effect of reducing the delay
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Embodiment 1
[0015] Embodiment one: if figure 2As shown, an RM or non-exclusive OR unit circuit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2 , the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the sixth N-type FinFET tube The two P-type FinFET tubes P2 are low-threshold P-type FinFET tubes, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type FinFET tube. Type FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-type ...
Embodiment 2
[0018] Embodiment two: if figure 2 As shown, an RM or non-exclusive OR unit circuit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2 , the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the sixth N-type FinFET tube The two P-type FinFET tubes P2 are low-threshold P-type FinFET tubes, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type FinFET tube. Type FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-type...
Embodiment 3
[0022] Embodiment three: as figure 2As shown, an RM or non-exclusive OR unit circuit based on FinFET transistors includes a first P-type FinFET transistor P1, a second P-type FinFET transistor P2, a first N-type FinFET transistor N1, and a second N-type FinFET transistor N2 , the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6 and the seventh N-type FinFET tube N7, the first P-type FinFET tube P1 and the sixth N-type FinFET tube The two P-type FinFET tubes P2 are low-threshold P-type FinFET tubes, the first N-type FinFET tube N1, the second N-type FinFET tube N2, the third N-type FinFET tube N3, the fourth N-type FinFET tube N4, and the fifth N-type FinFET tube. Type FinFET tube N5 and the seventh N-type FinFET tube N7 are low-threshold N-type FinFET tubes, and the sixth N-type FinFET tube N6 is a high-threshold N-type FinFET tube; the source of the first P-type FinFET tube P1 and the second P-typ...
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