Current mode rm or non-exclusive or unit circuit based on finfet transistor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NINGBO UNIV
- Publication Date
- 2020-07-24
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Abstract
Description
technical field
[0001] The invention relates to an RM logic OR non-exclusive OR unit circuit, in particular to a current mode RM or non-exclusive OR unit circuit based on a FinFET transistor. Background technique
[0002] The basic gate circuit is the most basic logic unit in the digital circuit, and the XOR and XOR gate circuits are an indispensable part of the basic logic circuit. Current-mode logic circuits have the characteristics of high operating frequency, low power consumption, and strong anti-interference ability. However, traditional CMOS current-mode logic still faces the problems of large number of transistors, high power consumption, and complex design. With the continuous advancement of VLSI technology, the operating speed and power consumption requirements of digital systems continue to increase, and the performance requirements for basic logic units are also more stringent, requiring that basic logic units should have lower power consumption and smaller delay...