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A method for pulling and growing single crystal silicon with large diameter without double ridges

A growth method and double-edge line technology are applied in the field of pulling growth of large-diameter single-crystal silicon without double-edge lines, which can solve the problems of double-edge lines, affecting the appearance and quality of products, and affecting the oxygen content of the semiconductor single crystal head, etc. Achieve the effect of improving quality, less defects, and low oxygen content in the head

Active Publication Date: 2019-08-02
JINZHOU SHENGONG SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the initial stage of equal diameter, double ridgelines are prone to appear on the surface of the semiconductor single crystal, which will affect the oxygen content of the head of the semiconductor single crystal. At the same time, Swirl micro-defects will occur, which will seriously affect the appearance and quality of the product

Method used

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  • A method for pulling and growing single crystal silicon with large diameter without double ridges
  • A method for pulling and growing single crystal silicon with large diameter without double ridges
  • A method for pulling and growing single crystal silicon with large diameter without double ridges

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Embodiment 1

[0034] This embodiment provides a method for pulling and growing single crystal silicon with a large diameter without double ridges, and the specific process is as follows:

[0035] Step 1: Put 200kg of high-purity (purity>99.99%) polysilicon raw material into the crucible, install the precisely oriented seed crystal on the seed crystal holder, and the diameter of the seed crystal is 15-25 mm, close the furnace door; adjust the cooling water flow, control the outlet water temperature within the range of 25±5°C, start the vacuum system to vacuum the furnace; when the vacuum degree reaches 10 -4 At the Pa level, argon gas is introduced, and the flow rate of the argon gas is 25-30 slpm; the power is turned on, and the furnace is heated at a heating rate of 150-350 °C / h, and when the temperature reaches 1460 °C, stop heating; heat preservation 3- After 5 hours, the raw materials are all melted at this time, and then cooled to 1410°C at a cooling rate of 15-25°C / h, and the liquid l...

Embodiment 2

[0051] The method for pulling and growing single crystal silicon with a large diameter without double ridges provided in this embodiment is different from the above-mentioned method in that the crucible is also rotating while the crystal is rotating. The rotation direction is opposite, and the growth control parameters of the crystal during the shouldering process are shown in Table 2.

[0052]Table 2 Control parameters of crystal growth during shouldering

[0053]

[0054]

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Abstract

The invention discloses a Czochralski growth method of large-diameter double ridge line-free monocrystalline silicon. The method comprises the steps of material melting, crystal washing, seeding, shouldering, equal-diameter growth, pulling and cooling; in the shouldering process, the self-rotating speed of crystals is controlled to 8-9 rpm, and the growth speed of the crystals is controlled; when the length d of the crystals is more than 0 nm and not more than 10 nm, the initial growth speed of the crystals is 27-33 mm / h; when the length l of the crystals is more than 10 mm and not more than 70 mm, the growth speed of the crystals is 30-36 mm / h; when the length l of the crystals is more than 70 mm and not more than 100 mm, the growth speed of the crystals is 28-34 mm / h; when the length l of the crystals is more than 100 mm and not more than 130 mm, the growth speed of the crystals is 19-26 mm / h; when the length l of the crystals is more than 130 mm and not more than 170 mm, the growth speed of the crystals is 18-22 mm / h; and after shouldering control is completed, the crystals undergo the equal-diameter growth, and then is pulled and cooled. The growth method allows the grown monocrystalline silicon to have no double ridge lines, few Swirl defects and low content of oxygen in the head through controlling the growth rotating speed and the shouldering process of the crystals, and improves the quality of the above product.

Description

technical field [0001] The invention relates to the technical field of single crystal material preparation, and more specifically, the invention relates to a method for pulling and growing single crystal silicon with large diameter and without double ridge lines. Background technique [0002] With the development of my country's integrated circuit industry, a certain industrial scale has been formed, as well as a relatively complete industrial chain pattern in which the three industries of integrated circuit design, chip manufacturing, packaging and testing and supporting supporting industries develop together. For semiconductor materials, the diameter of 12-inch (300mm) wafers demanded by the global market gradually increases to more than 17 inches, and the demand is increasing. The methods for producing monocrystalline silicon mainly include CZ method (Czochralski method), FZ method (zone melting method) and epitaxy method. Among them, the Czochralski method is the most wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/00C30B29/06
Inventor 马野秦朗李昀珺何翠翠方华
Owner JINZHOU SHENGONG SEMICON CO LTD