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A kind of semiconductor device and its manufacturing method and electronic device

A technology of electronic devices and semiconductors, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problem of shrinking the size of semiconductor devices

Active Publication Date: 2020-03-10
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As the feature size enters the nanoscale, reducing the size of semiconductor devices while maintaining the performance of semiconductor devices has become the current development direction of semiconductor devices. Ultra-micro-nano devices will become the mainstream of semiconductor devices in the future. The process limits the further reduction of the size of semiconductor devices, so further breakthroughs in nano-semiconductor devices and their preparation methods are required to solve the drawbacks of existing technologies

Method used

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  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device

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preparation example Construction

[0040] In order to solve the problems in the prior art, the present invention provides a method for preparing a semiconductor device, the method comprising:

[0041] providing a base, on which a number of fins spaced apart from each other are formed, and an insulating layer and a sacrificial layer are sequentially formed on the surface of the fins;

[0042] forming a cover layer on the substrate and etching back to expose the sacrificial layer on top of the fin;

[0043] Nano quantum dots comprising a conductive material are grown on top of the exposed sacrificial layer, wherein the nano quantum dots are embedded in the insulating layer below the sacrificial layer to obtain a nano quantum dot based channel.

[0044] In the present invention, the fins include sapphire material; the insulating layer includes a BN nanotube layer.

[0045] Wherein, the BN nanotube has a graphitized structure similar to that of the C nanotube, has the same excellent mechanical properties and heat ...

Embodiment 1

[0050] In order to solve the problems in the prior art, the present invention provides a method for manufacturing a semiconductor device. The method will be further described below in conjunction with the accompanying drawings.

[0051] in, Figure 2a-2f It is a schematic diagram of the preparation process of the semiconductor device described in the present invention; Figure 4 is an external view of an example of a mobile phone handset in the present invention.

[0052] figure 1 It is a flow chart of the preparation process of the semiconductor device described in the present invention, which specifically includes the following steps:

[0053] Step S1: providing a substrate, on which a plurality of fins spaced apart from each other are formed, and an insulating layer and a sacrificial layer are sequentially formed on the surface of the fins;

[0054] Step S2: forming a cover layer on the substrate and etching back to expose the sacrificial layer on the top of the fin;

...

Embodiment 2

[0096] In order to solve the problems in the prior art, the present invention provides a method for manufacturing a semiconductor device. The method will be further described below in conjunction with the accompanying drawings.

[0097] in, Figure 3a-3f It is a schematic diagram of the preparation process of the semiconductor device described in the present invention.

[0098] Step 1 is performed to provide a base, on which a plurality of fins 302 spaced apart from each other are formed, and an insulating layer 304 and a sacrificial layer 303 are sequentially formed on the surfaces of the fins.

[0099] Specifically, such as Figure 3a As shown, in this step, in order to prepare a transistor that does not contain semiconductor materials in the present invention, the fins, the insulating layer, and the nano-quantum dots formed in subsequent steps are all selected from materials other than semiconductor materials.

[0100] The substrate is supported by any material other than...

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The manufacturing method comprises the steps of providing a substrate, forming a plurality of mutually spaced fins on the substrate, and forming an insulating layer and a sacrificial layer in sequence at the surface of each fin; forming a covering layer on the substrate, etching back the covering layer so as to expose the sacrificial layer at the top of each fin; and growing a nanometer quantum dot comprising a conductive material at the top of each exposed sacrificial layer, wherein each nanometer quantum dot is embedded into the insulating layer below the corresponding sacrificial layer so as to acquire a nanometer quantum dot based channel. According to the invention, the insulating layer and the sacrificial layer are formed on each fin in the preparation process, and then the nanometer quantum dot comprising a conductive material grows at the top of each sacrificial layer, wherein the nanometer quantum dot is formed above the insulating layer of a nanotube, so that limitations in size of a semiconductor material in the prior art are overcome, the size of the device can be further reduced, and good performance can also be ensured at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory units on a single wafer, etc. [0003] As the feature size enters the nanoscale, reducing the size of semiconductor devices while maintaining the performance of semiconductor devices has become the current development direction of semiconductor devices. Ultra-micro-nano devices will become the mainstream of semiconductor devices in the future. Technology lim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/775B82B3/00B82B1/00B82Y10/00
CPCB82B1/00B82B3/00B82Y10/00H01L29/775
Inventor 张海洋刘盼盼
Owner SEMICON MFG INT (SHANGHAI) CORP