Power semiconductor device with temperature detection and manufacturing method thereof
A technology of power semiconductors and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, and single semiconductor device testing. The effect of timely detection
Active Publication Date: 2019-11-05
BYD SEMICON CO LTD
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Problems solved by technology
[0003] In the process of realizing the present invention, the inventors have found that there are at least the following problems in the prior art: using a thermistor to detect the temperature of a power device is an indirect detection method. , the temperature difference between the thermistor and the power device is not fixed. Therefore, the temperature error of the power device is often evaluated by the nearby thermistor, and the detection and feedback cannot be timely and effective, and the power device cannot be protected in time.
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Embodiment Construction
[0022] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0023] In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", "front", "back", etc. are based on the orientation or positional relationship shown in the attached drawings, and are only for the convenience of description The present invention and simplified description do not indicate or imply that the device or element re...
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The invention provides a power semiconductor device with a temperature detection function. The manufacture method for the power semiconductor device with temperature detection comprises that: a first metal zone and a second metal zone which are mutually connected are formed on a front side of a first conductive type substrate; the first metal zone and the second metal zone can generate different sensing potentials under same temperature; when temperature detection is needed, a first metal electrode leaded out from the first metal zone and a second metal electrode leaded out from a second metal zone form a loop with an external current detection member; and temperature of the power semiconductor device can be detected through detecting current in the loop. According to the power semiconductor device with temperature detection, heat transmission does not need a heat conduction path, in which the heat goes through a power device, a conduction medium and then a temperature detection member, and the temperature of the power semiconductor device can be accurately detected.
Description
technical field [0001] The invention belongs to the field of basic electrical components and relates to semiconductor devices, in particular to a power semiconductor device with temperature detection and a manufacturing method thereof. Background technique [0002] Power devices have the characteristics of fast response, excessive current, low conduction voltage, and simple control. However, due to the temperature characteristics of semiconductors, they can only work in a specific temperature range. After exceeding this temperature range, it is easy to cause irreversible failure. Nowadays, the temperature detection of power devices is often done by placing an external thermistor near the power device, and judging the temperature of the thermistor by detecting the current on the thermistor, and then using the temperature of the thermistor to approximate the temperature of the power device . [0003] In the process of realizing the present invention, the inventors have found...
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IPC IPC(8): H01L21/28H01L29/40G01R31/26G01R19/00
CPCG01R19/00G01R31/26H01L21/28H01L29/40H01L29/41
Inventor 吴海平肖秀光黄宝伟
Owner BYD SEMICON CO LTD