Method and device for forming high temperature resistance light emitting diode evaporation deposition film pattern
A technology of light-emitting diodes and high temperature resistance, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve problems such as degradation, inability to tightly adsorb non-magnetic metal masks, and difficulty in manufacturing
Pending Publication Date: 2017-10-27
元茂光电科技(武汉)有限公司
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[0004] However, the above methods all need to use lithographic etching process to complete the electrode production, but the lithographic etching process is quite cumbersome and complicated, and has high difficulties in production.
[0005] Furthermore, in order to improve the shortcomings of the above-mentioned process, the magnetic adsorption components used in it will have the phenomenon of magnetic force degradation and degradation when the working temperature is above 80°C, resulting in the problem that the non-magnetic metal mask cannot be tightly adsorbed
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[0025] see Figure 1A and Figure 1B , which is an exploded perspective view and a side view of a device for forming a high-temperature-resistant light-emitting diode vapor-deposited film pattern according to the present invention. The present invention provides a device for forming a high-temperature-resistant light-emitting diode vapor-deposited film pattern, which includes a carrier 10 , a high-temperature-resistant magnetic adsorption component 20 , a non-magnetic metal mask 30 and a chip 40 . The carrier 10 has a first accommodating space 11 and a second accommodating space 12 . The high temperature resistant magnetic adsorption component 20 is disposed in the first accommodating space 11 . The chip 40 is disposed in the second accommodating space 12 of the carrier 10 . The non-magnetic metal mask 30 covers the second accommodating space of the carrier 10 , where the high temperature is above 80° C.
[0026] The carrier 10 can be in any shape such as circular, square o...
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The invention provides a method for forming a high temperature resistance light emitting diode evaporation deposition film pattern. The method for forming the high temperature resistance light emitting diode evaporation deposition film pattern comprises steps of arranging a high temperature resistance magnetic adsorbing assembly in a first containing space of a carrier, arranging a chip inside a second containing space of the carrier and using a non-magnetic metal mask to cover the second containing space of the carrier, wherein the high temperature is over 80 DEG. The invention also discloses a device for forming a high temperature resistance light emitting diode evaporation deposition film pattern comprises a carrier, a high temperature resistance magnetic adsorbing assembly, a chip and a non-magnetic metal mask. The carrier has the first containing space and the second containing space; the high temperature resistance magnetic adsorbing assembly is arranged inside the first containing space; the chip is arranged in the second containing space of the carrier; the non-magnetic metal mask covers the second containing space of the carrier, and the high temperature is over 80 DEG.
Description
technical field [0001] The present invention aims to provide a method and device for forming a high-temperature-resistant light-emitting diode evaporated film pattern that greatly reduces manufacturing costs and facilitates mass production of products, and is especially suitable for use in the manufacture of light-emitting diode electrodes or similar structures. Background technique [0002] Due to low power consumption and small size, light-emitting diodes are currently widely used in indicator lights of household appliances, backlights of mobile phones, traffic signals, advertising billboards, and third brake lights of automobiles. The general manufacturing method of light-emitting diodes is to make III-V compound chips first, then make metal electrodes on the III-V compound chips, then cut to form light-emitting diode crystal grains, and finally carry out packaging operations to complete the light-emitting diodes. make. [0003] The existing manufacturing methods of the ...
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IPC IPC(8): H01L33/00H01L33/36
CPCH01L33/36H01L2933/0016
Inventor 龚正刘建政杨政达
Owner 元茂光电科技(武汉)有限公司