Side-coupling grating for laser, method for manufacturing same, and laser comprising same

Abstract

Disclosed is a preparation method of a side edge coupling raster of a laser. The preparation method comprises the steps of 1, etching and preparing a laser ridge waveguide, preparing an electron beam lithography alignment mark on a ridge waveguide sample and coating the sample with photoresist; 2, performing primary electron beam exposure on the two sides of the ridge waveguide coated with photoresist; 3, determining distance deviation between a raster mask and the ridge waveguide after electron beam exposure, and correcting the deviation in the raster layout; 4, performing formal electron beam exposure and developing on the sample by the corrected raster layout; and 5, performing metal sputtering and striping to form the side edge coupling raster. By adoption of the preparation method, a perfect feedback raster tightly close to the ridge waveguide can be prepared, so that a good structural foundation is provided for distributed feed back die selection of the laser, electron beam exposure time is reduced, and the cost is lowered.

Description

Technical field [0001] The present invention relates to the fields of semiconductor technology and nano-processing, and further relates to a method for preparing a side-coupled laser metal grating, a grating made according to the method, and a laser containing the grating. Background technique [0002] Due to the advantages of small size, low cost, and easy integration, semiconductor lasers have a wide range of applications in many fields, such as space communication, gas detection, and laser countermeasures. In particular, semiconductor lasers in the mid-infrared 2~5μm band have attracted more and more attention. This is because 2~5μm is a very important atmospheric window. The absorption characteristic lines of many gas molecules are in this band, so for atmospheric monitoring , Mine methane gas detection and other civil projects have great application potential, using this band of semiconductor laser preparation of Tunable Diode Laser Atmosphere Spectrum technology (Tunable Di...

AI Technical Summary

Problems solved by technology

The preparation of the side-coupled grating is a difficult point. This is because the ridge waveguide has a certain height and width, which is different from the planar photolithography. During the process of removing the glue, there will be glue accumulation at the bottom of the ridge. Phenomenon, for the commonly used holographic exposure, can not fully expose

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