Side edge coupling raster of laser and preparation method for raster, and laser comprising raster

Abstract

Disclosed is a preparation method of a side edge coupling raster of a laser. The preparation method comprises the steps of 1, etching and preparing a laser ridge waveguide, preparing an electron beam lithography alignment mark on a ridge waveguide sample and coating the sample with photoresist; 2, performing primary electron beam exposure on the two sides of the ridge waveguide coated with photoresist; 3, determining distance deviation between a raster mask and the ridge waveguide after electron beam exposure, and correcting the deviation in the raster layout; 4, performing formal electron beam exposure and developing on the sample by the corrected raster layout; and 5, performing metal sputtering and striping to form the side edge coupling raster. By adoption of the preparation method, a perfect feedback raster tightly close to the ridge waveguide can be prepared, so that a good structural foundation is provided for distributed feed back die selection of the laser, electron beam exposure time is reduced, and the cost is lowered.

Description

technical field [0001] The invention relates to the field of semiconductor technology and nano-processing, and further relates to a preparation method of a side-coupled laser metal grating, a grating manufactured according to the preparation method, and a laser including the grating. Background technique [0002] Due to the advantages of small size, low cost, and easy integration, semiconductor lasers are widely used in many fields, such as space communication, gas detection, and laser countermeasures. In particular, semiconductor lasers in the mid-infrared 2-5 μm band have received more and more attention. This is because 2-5 μm is a very important atmospheric window, and the absorption characteristic lines of many gas molecules are in this band. Therefore, for atmospheric monitoring It has great application potential in civil projects such as mine gas detection and mine gas detection. Tunable DiodeLaser Atmosphere Spectrum (TDLAS for short) prepared by semiconductor lasers...

AI Technical Summary

Problems solved by technology

The preparation of the side-coupled grating is a difficult point. This is because the ridge waveguide has a certain height and width, which is different from the planar photolithography. During the process of removing the glue, there will be glue accumulation at the bottom of the ridge. Phenomenon, for the commonly used holographic exposure, can not fully expose

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