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Method for preparing Micro LED display device

A display device and a part of the technology, applied in the field of preparation of Micro LED display devices, can solve problems such as difficult to achieve high-density coating or high-resolution display of quantum dots, difficult to achieve coating film accuracy or uniformity, and color quality degradation , to achieve high density distribution and size uniformity, improve yield and display quality, and reduce mutual influence

Active Publication Date: 2017-11-07
SHENZHEN SITAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the surface of Micro LED is not flat and uniform after processing, it is difficult to directly coat quantum dots on Micro LED to achieve the accuracy or uniformity of the coating film. High-density coating of quantum dots or high-resolution display, the uniformity of the coated quantum dots is poor, and more defects will appear during spraying. At the same time, the colors of quantum dots of various colors affect each other, resulting in a significant decline in the quality of colorization

Method used

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  • Method for preparing Micro LED display device
  • Method for preparing Micro LED display device
  • Method for preparing Micro LED display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The following steps are used to prepare the Micro LED display device:

[0049] Prepare the blue Micro LED chip 2 array on the substrate 1, the structure of the Micro LED chip array is as follows figure 1 shown;

[0050] Prepare mask plate 1: use photolithography to prepare mask plate 1. The mask plate 1 has an opaque portion 3 and is located in row 2i-1 and column 2j-1 with the array of Micro LED chips 2 (i, j=1, 2, 3...n) Micro LED chip 2 corresponding to the light-transmitting part 4, the three-dimensional structure of the mask plate 1 is as follows figure 2 As shown, the top view is as image 3 shown;

[0051] Prepare substrate one 5: evaporate a layer of endothermic material one 7 on the substrate one 6;

[0052] The red quantum dot material 8 is coated on the heat-absorbing material 1 by inkjet printing technology. The substrate is a flexible polymer film with a thickness of 0.15 mm. The heat-absorbing material is composed of a three-layer structure. One laye...

Embodiment 2

[0062] The following steps are used to prepare the Micro LED display device:

[0063] Micro LED chip array 2 is prepared on the substrate 1, the structure diagram of the Micro LED chip array is as follows Figure 8 shown;

[0064] Preparing the third mask: using photolithography technology to prepare the third mask, the third mask has a light-transmitting part corresponding to all the Micro LED chips 2 in the Micro LED chip 2;

[0065] Preparation of substrate 3: Evaporate a layer of endothermic material on the substrate;

[0066] Use laser printing technology to print the red quantum dot material to the position corresponding to the 3j position in the 2i-1 column of the Micro LED chip and the 2j-1 position in the 2i column (i,j=1,2,3...n) On the heat-absorbing material, print the green quantum dot material to correspond to the 3j-2 position in the 2i-1 column of the Micro LED chip and the 2j-th position in the 2i column (i,j=1,2,3...n) On the endothermic material, the thic...

Embodiment 3

[0071] The following steps are used to prepare the Micro LED display device:

[0072] Micro LED chip 2 array is prepared on substrate 1, and the structure of Micro LED chip 2 array is as follows Figure 8 As shown, the Micro LED chip 2 is a blue Micro LED chip;

[0073] Prepare mask plate 4: use photolithography to prepare mask plate 4, the mask plate 4 has the same structure as Micro LED chip 2 in column 2i-1, column 3j, column 2i-1, column 3j-2, column 2i The light-transmitting part corresponding to the 2j-1th and the 2jth position (i,j=1,2,3...n) of the 2ith column;

[0074] Preparation of substrate 4: Evaporate a layer of endothermic material on the substrate;

[0075] Use laser printing technology to print the red quantum dot material to the position corresponding to the 3j position in the 2i-1 column of the Micro LED chip and the 2j-1 position in the 2i column (i,j=1,2,3...n) On the heat-absorbing material, print the green quantum dot material to correspond to the pos...

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Abstract

The invention discloses a method for preparing a Micro LED display device. The method can realize the simultaneous transfer of different quantum dot materials, and also can realize the transfer of different quantum dot materials by preparing different mask plates, thereby effectively avoiding the interaction between the different quantum dot materials; and has the characteristics of being simple to operate, high in transfer efficiency and easy in large scale rapid production, improves the high-resolution colored display quality, and has an important practical value in the technical field of new composite display.

Description

technical field [0001] The invention relates to the field of LED displays, in particular to a method for preparing a Micro LED display device. Background technique [0002] Micro LED is a miniaturized LED array structure with self-luminous display characteristics. Its technical advantages include all solid state, long life, high brightness, low power consumption, small size, ultra-high resolution, and can be applied to extreme environments such as high temperature or radiation. . Compared with OLED technology, which is also a self-luminous display, Micro LED not only has higher efficiency and longer life, the material is not easily affected by the environment and is relatively stable, and can also avoid image sticking. [0003] At present, the display mode of Micro LED is usually monochrome display, and the colorization of Micro LED display is the key technology for further expanding its application. The RGB three-color LED method is one of the important technical direction...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50
CPCH01L33/50H01L2933/0041
Inventor 孙小卫王恺刘召军王立铎郝俊杰刘皓宸
Owner SHENZHEN SITAN TECH CO LTD