Preparation method of graphene-based sensor

A graphene-based sensor technology, applied in the field of sensors, can solve problems such as slow progress, large influence of annealing temperature characteristics, poor uniformity, repeatability, etc., to achieve good control, improve product performance and marketization process.

Active Publication Date: 2017-11-14
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0003] However, due to the low concentration of graphene dispersed in water after being oxidized by chemical methods, and due to the characteristics of the suspension, it is difficult to use traditional film-forming processes such as spin coating to form a film of graphene dispersion; at the same time, graphite oxide The annealing temperature of alkene has a great influence on the oxygen-containing groups of its material, so its characteristics are greatly affected by the process, resulting in poor uniformity, repeatability, and consistency, that is, the process window of the process is small, In the end, this material made slow progress in the market application direction of temperature and humidity sensors

Method used

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  • Preparation method of graphene-based sensor

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Embodiment Construction

[0021] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below with reference to the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general substitutions known to those skilled in the art are also covered within the protection scope of the present invention.

[0022] The present invention will be further described in detail below with reference to 1 to 4 and specific embodiments. It should be noted that, the accompanying drawings are in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly achieve the purpose of assisting the description of the present embodiment.

[0023] see figure 1 , the preparation method of the graphene-based sensor of the present embodiment comprises the following steps:

[0024] Step 01: See figure 2 , and sequentially form a lower electrode layer 02, a ...

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Abstract

The invention provides a preparation method of a graphene-based sensor. The method comprises the steps of successively forming a lower electrode layer, a bottom isolating layer and a graphene film on a substrate; injecting oxygen-containing plasma or oxygen-containing electrified groups into the graphene film for converting the graphene film to an oxidized graphene film, wherein the oxidized graphene film as a sensitive material layer; and successively forming a top isolating layer and an upper electrode layer on the surface of the oxidized graphene film. According to the preparation method, the graphene film is converted to the oxidized graphene film through ion injection, and furthermore uniformity and consistency of a graphene-based sensitive material can be well controlled.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a preparation method of a graphene-based sensor. Background technique [0002] The application of graphene-based materials is very extensive, and the application of graphene oxide in temperature and humidity sensors is one of the most market-oriented directions. [0003] However, due to the low concentration of graphene dispersed in water after chemical oxidation, and due to the characteristics of the suspension, it is difficult to use traditional film forming processes such as spin coating to achieve film formation of graphene dispersion; at the same time, graphite oxide The annealing temperature of alkene has a great influence on the oxygen-containing groups of its material, so that its characteristics are greatly affected by the process, resulting in poor uniformity, repeatability and consistency, that is, the process window of the process is small. Ultimately, the material m...

Claims

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Application Information

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IPC IPC(8): G01D5/24
CPCG01D5/24
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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