A kind of thin film transistor and its manufacturing method, display panel
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low yield rate of thin film transistors, and achieve the effect of improving yield rate
Active Publication Date: 2020-04-10
WUHAN TIANMA MICRO ELECTRONICS CO LTD
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[0003] Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof, and a display panel, which are used to solve the problem in the prior art that the yield rate of the thin film transistor is low when manufacturing the thin film transistor
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[0082] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0083] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a," "the," and "the" are intended to include the plural f...
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Abstract
Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof, and a display panel. The method for manufacturing a thin film transistor includes: after forming a semiconductor layer, forming a first insulating layer, a second insulating layer, and a gate layer between the first insulating layer and the second insulating layer on one side of the semiconductor layer, and then The first metal layer is formed on the side of the second insulating layer far away from the substrate, and a first via hole and a second via hole are formed through the first insulating layer, the second insulating layer, and the first metal layer in a row perpendicular to the substrate, and the second via hole is formed in a line perpendicular to the substrate. The orthographic projections of the first via hole and the second via hole on the substrate are located on both sides of the gate layer. In the embodiment of the present invention, since the gate layer is covered by part of the first metal layer in the direction perpendicular to the substrate, therefore This part of the first metal layer can prevent the cleaning liquid from contacting the second insulating layer, so that holes will not be formed on the second insulating layer, thereby avoiding the short circuit between the first metal layer and the second metal layer and the gate layer, thereby improving improved the yield of thin film transistors.
Description
technical field [0001] The present invention relates to the field of display technology, and in particular, to a thin film transistor, a method for manufacturing the same, and a display panel. Background technique [0002] In the prior art, in the process of manufacturing the thin film transistor, after the via hole is formed, a small amount of inorganic substances remaining on the semiconductor layer needs to be cleaned to prevent the source and drain electrodes of the thin film transistor from passing through the via hole and the semiconductor layer. The phenomenon of poor contact during connection, but when cleaning the inorganic substances remaining on the semiconductor layer, since the remaining inorganic substances are the same as the material of the insulating layer covering the gate layer, the insulating layer will also be cleaned with the same material. When the hole is deep, when a metal layer is formed on the side of the insulating layer away from the gate layer, ...
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IPC IPC(8): H01L21/336H01L29/786G02F1/1368
CPCG02F1/1368H01L29/66742H01L29/786
Inventor 林永祥
Owner WUHAN TIANMA MICRO ELECTRONICS CO LTD