Preparation method of using self-assembled nanospheres as an anti-reflection layer on the surface of Gaas solar cells

Abstract

The invention relates to a preparing method for taking self-assembly nanospheres as a surface antireflection layer of a GaAs solar cell. The method comprises the following steps of 1, mixing and stirring styrene monomer, polystyrene microspheres, cetyl alcohol and octaphenyl polyoxyethyiene (10) according to a certain proportion, then adding suitable quantity of water, and carrying out stirring continuously, thereby obtaining mixed liquid; 2, carrying out ultrasound on the mixed liquid to obtain miniemulsion; 3, importing nitrogen into the miniemulsion for a plurality of minutes, and adding potassium persulfate for polymerization reaction, thereby preparing monodisperse polystyrene nanospheres; 4, diluting polystyrene; 5, getting an epitaxial wafer employed by the GaAs solar cell and washing the epitaxial wafer; and 6, dripping and spraying dispersed solution on the epitaxial wafer, uniformly distributing the solution on the epitaxial wafer, drying the epitaxial wafer to obtain the nanosphere antireflection layer with a photonic crystal structure. According to the method, the absorption effect of the solar cell for photons is improved, and the photovoltaic conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to a method for improving the photon absorption efficiency of a GaAs solar cell, in particular to using self-assembled nanospheres as the surface anti-reflection structure of a thin film solar cell, and improving the light diffraction effect of the periodically distributed nanospheres on the surface layer. Transmittance, enhance the absorption of light by solar cells, thereby improving the photoelectric conversion efficiency of thin-film solar cells. Background technique [0002] As an important semiconductor material, III-V compound semiconductors have attracted extensive attention in the field of devices requiring high-performance optoelectronic properties. Among all III-V semiconductor materials, GaAs semiconductor is widely used in the manufacture of high-efficiency solar cells due to its direct bandgap structure and high carrier mobility. There are many factors that affect the photoelectric conversion efficiency of solar cel...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a preparation method using self-assembled nanospheres as the anti-reflection layer on the surface of GaAs solar cells, which solves the defect that the anti-reflection layer cannot be made on the surface of GaAs cells by using silicon-based conventional methods. The nanosphere structure with layers of different materials achieves anti-reflection effect

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