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Method for creating semiconductor wafers with distributed doping and wafers with distributed fields

A semiconductor and wafer technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, diffusion/doping, etc.

Active Publication Date: 2021-05-25
1366 TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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The application of aluminum has disadvantages

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  • Method for creating semiconductor wafers with distributed doping and wafers with distributed fields
  • Method for creating semiconductor wafers with distributed doping and wafers with distributed fields
  • Method for creating semiconductor wafers with distributed doping and wafers with distributed fields

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Embodiment Construction

[0032] As discussed above, typical semiconductor wafers for use in solar collectors have relatively thick sections in which the majority carriers are of one donor / acceptor type, eg typically p-type. Such wafers are formed and subsequently processed so that in the case of predominantly p-type wafers one side is doped to have the opposite donor / acceptor type, thus n-type majority carriers. For a typical wafer, the first portion will be essentially 180 microns the full thickness, while the other type of portion will only be about 0.5 microns thick. The junction between two parts is called a p / n junction. The following discussion mainly concerns a new method for preparing relatively thick sections, usually p-type sections. The methods discussed below will typically be used to create such wafers. After performing the method steps discussed herein, a p / n junction and opposite carrier type portion will be created on one surface. These methods can also be used to create thick, pred...

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Abstract

A semiconductor wafer is formed on a mold containing dopants. The dopants dope the melt region adjacent to the mold. There, the dopant concentration is higher than in the melt bulk. The wafer begins to solidify. Dopants diffuse poorly in solid semiconductors. After the wafer starts to solidify, dopants cannot enter the melt. Thereafter, the concentration of dopant in the melt adjacent to the surface of the wafer is less than the concentration of dopant present where the wafer was initially formed. New wafer regions grow from regions of the melt whose dopant concentration decreases over time. This establishes a dopant gradient in the wafer, with higher concentrations adjacent to the die. Ability to trim gradients. The gradient generates a field that can act as a drift field or a back surface field. Solar collectors can have open grid conductors on the back surface and better optical reflectors made possible by the inherent back surface field.

Description

[0001] Related literature [0002] HEREBY CLAIMING THE PROTECTION OF METHODS OF CREATING ASEMICONDUCTOR WAFER HAVING A DRIFT FIELD WITH PROFILED DOPING AND WAFERSHAVING A PROFILED DRIFT FIELD, filed January 26, 2015, inventors Ralf Jonczyk et al., applicants Bedford, Massachusetts US Provisional Application No. 62 / 107,711 of priority to 1366 Technologies, Inc. of Germany, the entire disclosure of which is hereby incorporated by reference. Accordingly, protection is also claimed for the invention filed on October 8, 2015, entitled "METHODS FORCREATING A SEMICONDUCTOR WAFER HAVING PROFILED DOPING AND WAFERS AND SOLARCELL COMPONENTS HAVING A PROFILED FIELD, SUCH AS DRIFT AND BACK SURFACE", the inventors are Ralf Jonczyk, etc., The applicant is the priority of US Provisional Application No. 62 / 239,115 to 1366 Technologies, Inc. of Bedford, MA, the entire disclosure of which is also hereby incorporated by reference. Background technique [0003] The technique disclosed in U.S. Pat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
CPCH01L21/00Y02E10/547H01L31/022425H01L31/068Y02E10/52C30B29/06H01L31/182C30B28/04C30B19/12C30B35/002C30B31/04C30B11/002C30B31/02Y02E10/546H01L31/1804Y02E10/544Y02P70/50H01L31/02167H01L31/0288H01L31/03046H01L31/048H01L31/06H01L31/18H01L31/056
Inventor R.荣茨克B.D.克南G.D.S.赫德尔森A.M.罗伦斯E.M.萨赫斯
Owner 1366 TECH INC