Unlock instant, AI-driven research and patent intelligence for your innovation.

Electronic heterosynaptic device having vertical structure and preparation method thereof

An electronic synapse, vertical structure technology, applied in electrical components and other directions, can solve problems such as miniaturization limitations, and achieve the effects of high integration and miniaturization, low power consumption, and low fabrication process

Active Publication Date: 2017-12-01
PEKING UNIV
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The only current report on heterosynaptic plasticity adopts a three-terminal planar device structure, which has inherent limitations in scalability, so there is an urgent need to develop neurons with better scalability and the ability to simulate heterosynaptic plasticity. Morphological device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electronic heterosynaptic device having vertical structure and preparation method thereof
  • Electronic heterosynaptic device having vertical structure and preparation method thereof
  • Electronic heterosynaptic device having vertical structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.

[0033] Such as Figure 4 As shown, the vertical heterogeneous electronic synaptic device of this embodiment includes: a substrate, a bottom electrode 3, a resistive layer 4, a top electrode 5, an insulating modulation layer 6, and a modulation electrode 7; The pattern of the bottom electrode 3, the bottom electrode 3, the resistive layer 4 and the top electrode 5 are sequentially formed on the substrate, and the bottom electrode 3, the resistive layer 4 and the top electrode 5 form a MIM nano stack structure; An insulating modulation layer 6 is formed on the stack structure, and the insulating modulation layer 6 covers the substrate, the top surface and two side walls of the MIM nano-stack structure; the modulation electrode 7 and the modulation electrode connected to it are formed on the insulating modulation layer 6. Terminal ME, the mo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electronic heterosynaptic device having a vertical structure and a preparation method thereof. According to the invention, the method herein includes the following steps: using a bottom electrode, a resistive layer and a top electrode to form a MIM nano stack structure, covering an insulating modulation layer, forming a modulating electrode on the insulating modulation layer, the modulating electrode circling the MIM nano stack structure; applying an electronic signal on the modulating electrode, changing the distribution of the electric field intensity in the resistive layer so as to effectively modulate the formation of the conductive filament in the resistive layer and the dynamic process of fusing and also realize heterosynaptic plasticity simulation. Also, according to the invention, the device herein has the advantages of low power consumption and compatibility between preparation technologies and traditional CMOS technologies. Compared with original planar structural devices, the vertical electronic heterosynaptic structure has higher integration and scaling property, and holds important significance to the realization of large-scale brain-like computing hardware.

Description

technical field [0001] The invention relates to the technical field of semiconductors and novel non-von Neumann computing, in particular to a vertical structure heterogeneous electronic synapse device suitable for brain-like computing and a preparation method thereof. Background technique [0002] Due to the use of separate storage and computing units, traditional computers face multiple challenges such as performance and power consumption. With the rapid development of the semiconductor industry, the traditional von Neumann computing architecture can no longer meet the demand for higher computing power and lower power consumption, and it is urgent to develop a disruptive computing architecture. Among them, brain-inspired computing based on the non-von Neumann architecture is expected to replace the traditional digital computing based on the von Neumann architecture in the future, leading to more intelligent, more energy-efficient, and more robust computing modes, and achiev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/841H10N70/883H10N70/011
Inventor 杨玉超殷明慧张腾黄如
Owner PEKING UNIV