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Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module

A power semiconductor, ground connection technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as high cost and complex workload

Active Publication Date: 2017-12-08
DANFOSS SILICON POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] A disadvantage with this known method is the use of different joining materials, for example adhesives and sintering pastes or sintering pastes and alcohol, which leads to relatively high, partly complicated workload and higher costs
[0011] Specifically, the method known as "Pick & Fix" involves the risk of a very fine line between full area pre-compaction (for attachment) and initial full area sintering

Method used

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  • Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module
  • Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module
  • Method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module

Examples

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Embodiment Construction

[0033] figure 1 A first exemplary embodiment of a plastically deformable first part of a power semiconductor module connected to a second part is shown. This example relates in particular to the attachment of a plastically deformable metal body to a non-plastically deformable semiconductor chip.

[0034] figure 1 A first component 10 of a power semiconductor module is shown, which is attached to a second component 30 of the power semiconductor module. Between the first part 10 and the second part 30, the sintering material 20 is arranged on the intended bonding surface, preferably over the entire area, after applying pressure and temperature by means of the stamper S in locally defined local areas 24 , the sintered material is at least pre-compacted (according to the "Pick & Fix" method), or alternatively has been fully sintered.

[0035] figure 1 The first part 10 is shown attached to the second part 30 after the attachment process but before the first part 10 and the sec...

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Abstract

A method for cohesively connecting a first component of a power semiconductor module to a second component of a power semiconductor module by sintering, the method comprising the steps of: applying a layer of unsintered sinter material to a predetermined bonding surface of the first component, arranging the second component on the surface layer of unsintered sinter material, attaching the second component to the first component by applying pressure and / or temperature on a locally delimited partial area within the predetermined bonding surface, processing the first and / or second component and / or other components of the power semiconductor module, and complete-area sintering of the sinter material.

Description

technical field [0001] The invention relates to a method for adhesively connecting a first part of a power semiconductor module to a second part of a power semiconductor module by sintering. Background technique [0002] In order to develop long-life and robust power semiconductor modules, there are stringent thermoelectric requirements specifically for the upper and lower bonding locations of the semiconductors, ie the top and bottom sides of the semiconductors. The underside of the semiconductor is usually in contact with a solder joint or with a sintered or infiltrated solder joint. [0003] The top side of the semiconductor has as standard a metallization or metal layer which is optimized for the bonding process of thick aluminum wires. Despite the strongly expanded metallization on the top and underside of the semiconductor, the semiconductor is getting thinner to reduce electrical losses. Power semiconductors are currently available on the market with a total thickne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L24/29H01L24/32H01L24/83H01L2224/29019H01L2224/29082H01L2224/29078H01L2224/3201H01L2224/32505H01L2224/8384H01L2224/83191H01L2224/83203H01L2924/00012B23K2101/40B23K20/023
Inventor 马丁·贝克尔罗纳德·艾西尔弗兰克·奥斯特瓦尔德霍尔格·乌尔里奇加赛克·鲁茨基
Owner DANFOSS SILICON POWER