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Modeling method and device for semiconductor device statistic model

A technology of statistical models and modeling methods, applied in the fields of instruments, calculations, electrical digital data processing, etc., can solve the problems of low analysis accuracy and difficult combination

Active Publication Date: 2017-12-15
锐立平芯微电子(广州)有限责任公司
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Problems solved by technology

[0005] Aiming at the problems existing in the prior art, an embodiment of the present invention provides a modeling method and device for a statistical model of a semiconductor device, which is used to solve the problem of using the device statistical model to analyze the influence of process fluctuations on device performance in the prior art There are certain difficulties in combining the statistical model with the process angle model, which leads to the technical problem of low analysis accuracy when the model analyzes the impact of process fluctuations on device performance

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  • Modeling method and device for semiconductor device statistic model
  • Modeling method and device for semiconductor device statistic model

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Embodiment 1

[0033] This embodiment provides a method for modeling a statistical model of a semiconductor device, such as figure 1 As shown, the method includes:

[0034] S101. Divide the sub-modules of the statistical model of the semiconductor device into a process corner module, a global fluctuation module and a local fluctuation module;

[0035] In this embodiment, in order to improve the analysis accuracy of the statistical model of semiconductor devices when analyzing the impact of process fluctuations on device performance, the sub-modules of the statistical model of semiconductor devices are divided into process corner modules, global fluctuation modules, and module and local fluctuation module.

[0036] Specifically, global fluctuations refer to fluctuations between different batches of lots, or between different wafers of the same batch, or between different dies of the same silicon wafer. Generally, global fluctuations are caused by fluctuations in macroscopic processes such as...

Embodiment 2

[0047] Corresponding to Embodiment 1, this embodiment provides a modeling device for a statistical model of a semiconductor device, such as figure 2 As shown, the device includes: dividing unit 21, establishing unit 22, arranging unit 23 and receiving unit 24; wherein,

[0048] In order to improve the analysis accuracy of the model when the semiconductor device statistical model analyzes the impact of process fluctuations on device performance, the division unit 21 is used to divide the sub-modules of the semiconductor device statistical model into process corner modules, global The fluctuation module and the local fluctuation module; specifically, the global fluctuation refers to the fluctuation between different batches of lots, or between different wafers of the same batch, or between different dies of the same silicon wafer. Generally, global fluctuations are caused by heat, gas Such fluctuations have the same impact on devices in the same chip. Local fluctuations refer ...

Embodiment 3

[0055] In practical applications, when using the modeling method provided in Embodiment 1 and the modeling device provided in Embodiment 2 to model the resistance statistical model, the specific implementation is as follows:

[0056] In this embodiment, in order to improve the analysis accuracy of the resistance statistical model when analyzing the impact of process fluctuations on device performance, the sub-modularization of the resistance statistical model is divided into process corner modules, global fluctuation modules and local Volatility module.

[0057] Specifically, global fluctuations refer to fluctuations between different batches of lots, or between different wafers of the same batch, or between different dies of the same silicon wafer. Generally, global fluctuations are caused by fluctuations in macroscopic processes such as heat and gas. Such fluctuations have the same effect on devices within the same chip. Local fluctuations refer to the differences between d...

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Abstract

The invention provides a modeling method and device for a semiconductor device statistic model. The method comprises the steps that sub-modules of the semiconductor device statistic model are divided into a process corner module, a whole situation fluctuation module and a local fluctuation module; a semiconductor device circuit model is built; on the basis of preset arrangement rules, the process corner module, the whole situation fluctuation module, the local fluctuation module and the circuit module are arranged to form the semiconductor device statistic model; in this way, when the semiconductor device statistic model is built, on the basis of the process corner module, the influence of the process corner on the semiconductor device performance is considered, so that the analysis precision is higher when the influence of the built semiconductor device process model on the process fluctuation device performance is analyzed, and then the precision of the semiconductor device can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device modeling, and in particular relates to a modeling method and device for a statistical model of a semiconductor device. Background technique [0002] With the development of integrated circuit technology and more and more widely used, the requirements of high reliability, high performance and low cost must be considered in the design of integrated circuits. [0003] There are different degrees of process fluctuations in each step of the integrated circuit manufacturing process. Process fluctuations will cause fluctuations in the performance of devices including threshold voltage and saturation current, which will affect product yield. The smaller the feature size of the device, the greater the impact of this fluctuation on the device and circuit. [0004] The impact of process fluctuations on device performance can be represented by the statistical model of the device. When statistica...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/3323G06F30/367
Inventor 卜建辉李莹赵博华罗家俊韩郑生
Owner 锐立平芯微电子(广州)有限责任公司
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