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IN-LINE device electrical property estimating method and test structure of the same

An electrical performance and device technology, which is applied in the field of electrical performance measurement and test structure of IN-LINE devices, and can solve problems such as the increase of bridging defects.

Active Publication Date: 2017-12-22
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reduction of the gap between the gate of the transistor and the two ends of the gate can increase the occurrence of bridging defects, as well as induce leakage current tunneling through the dielectric material in the gap

Method used

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  • IN-LINE device electrical property estimating method and test structure of the same
  • IN-LINE device electrical property estimating method and test structure of the same
  • IN-LINE device electrical property estimating method and test structure of the same

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Embodiment Construction

[0018] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, or may include forming an additional component between the first component and the second component An embodiment such that the first part and the second part may not be in direct contact. Also, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0019] ...

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Abstract

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit. The invention relates to a IN-LINE device electrical property estimating method and test structure of the same.

Description

technical field [0001] The embodiment of the present invention relates to a method for measuring and calculating the electrical performance of an IN-LINE device and a testing structure thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. Along with this development, the critical dimension of the wire and the spacing between the wire and the wire end have also been scaled down. However, the reduction of the gate of the transistor and the spacing between the two ends of the gate can increase the occurrence of bridging defects, as well as induce leakage current tunneling through the dielectric material in the spacing. Contents of the invention [0003] According to one embodiment of the present invention, there is provided a method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L23/58
CPCH01L21/50H01L23/58H01L22/30G01R31/307G01R31/2653H01L22/34H01L22/14
Inventor 王振翰林群雄
Owner TAIWAN SEMICON MFG CO LTD
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