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Growth furnace capable of growing large-diameter monocrystalline silicon ingots in furnace lid and furnace cylinder

A single-crystal silicon ingot and large-diameter technology, applied in the field of growth furnaces, can solve the problems of inability to generate large-diameter single-crystal silicon rods and high cost and expense

Inactive Publication Date: 2018-01-05
SHANGHAI HANHONG PRECISION MACHINERY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing monocrystalline silicon growth furnace is limited by the size of the neck end of the furnace cover, the diameter of the isolation valve and the inner diameter of the upper furnace cylinder. According to the existing crystal growth method, it is impossible to produce large-diameter single-crystalline silicon rods. If large-diameter single-crystalline silicon rods are to be produced , it is necessary to increase the size of the neck end of the furnace cover, the diameter of the isolation valve and the inner diameter of the upper furnace cylinder. The existing equipment structure cannot meet the requirements, and the design needs to be re-developed, and the cost is too high

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  • Growth furnace capable of growing large-diameter monocrystalline silicon ingots in furnace lid and furnace cylinder

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with the accompanying drawings.

[0016] Such as figure 1 As shown, compared with the existing monocrystalline silicon growth furnace, the large-diameter single crystal silicon growth furnace of the present invention has a similar overall structure, including a furnace cylinder 1, an isolation valve 2 (588mm), and an upper furnace cylinder 3 (2205mm). There are mainly the following points:

[0017] 1. The height of the furnace cover is 730mm, which is 200mm higher than that of the existing single crystal silicon growth furnace. Large-diameter monocrystalline silicon ingots can be directly grown in the space formed by the furnace cover and the furnace cylinder without entering the isolation valve and the upper furnace cylinder.

[0018] 2. The lifting method and stroke of the lifting part set are changed. The lifting method of the lifting part of the existing monocrystalline silicon growth furnace: i...

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Abstract

The invention provides a growth furnace capable of growing large-diameter monocrystalline silicon ingots in a furnace lid and a furnace cylinder. Height of the furnace lid is 730 mm. An upper furnacecylinder, an isolating valve, the furnace lid and a furnace cylinder water-cooling flange are connected together for integrated lifting, and the stroke is 800 mm. By the new crystal growth mode, monocrystalline silicon ingots with large diameter phi of 450 mm can grow; and by a traditional crystal growth mode, traditional monocrystalline silicon rods with diameter being not more than 8 inches cangrow. In addition, cost difference is not large.

Description

technical field [0001] The invention relates to the field of single crystal silicon growth, in particular to a growth furnace capable of growing large-diameter single crystal silicon ingots in a furnace cover and a furnace cylinder. Background technique [0002] The existing single crystal silicon growth furnace mainly grows single crystal silicon rods with a diameter not larger than 8 inches. The crystal growth process is generally seeded in the furnace tube, shouldered, equal in diameter, and rotated to grow. The grown monocrystalline silicon rod passes through the isolation valve (588mm) and enters the upper furnace tube (2205mm). Finally, the entire crystal rod is completely Located in the upper furnace cylinder. The existing monocrystalline silicon growth furnace is limited by the size of the neck end of the furnace cover, the diameter of the isolation valve and the inner diameter of the upper furnace cylinder. According to the existing crystal growth method, it is imp...

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Application Information

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IPC IPC(8): C30B15/00C30B29/06
Inventor 刘海贺贤汉郡司拓黄保强何爱军
Owner SHANGHAI HANHONG PRECISION MACHINERY