Waffle island type diode triggered silicon controlled electrostatic protection device

Abstract

The invention discloses a waffle island type diode triggered silicon controlled electrostatic protection device. The waffle island type diode triggered silicon controlled electrostatic protection device comprises a P type substrate and a BN buried layer inside the P type substrate, wherein a high-voltage N trap is arranged on the BN buried layer; a first P trap, a first P-base injection layer, a second P+ injection area, a third N+ injection area, a third P+ injection area, a second P-base injection layer and a second P trap are arranged on the high-voltage N trap in sequence from left to right; a first P+ injection area, a first N+ injection area and a second N+ injection area are arranged inside the first P trap in sequence from left to right; and a fourth N+ injection area, a fifth N+ injection area and a fourth P+ injection area are arranged inside the second P trap in sequence from left to right. The device is embedded in a parallel island type diode, the electrostatic discharge capacity of the device is strengthened while the trigger voltage of the device is reduced, and discharge efficiency of the device is improved by adopting a waffle type array to implement layout.

Description

technical field [0001] The invention relates to the field of electrostatic protection of integrated circuits, in particular to a waffle-shaped island-type diode triggering a thyristor electrostatic protection device. Background technique [0002] With the improvement of process technology, the reliability problem has become a bottleneck restricting the development of integrated circuits. Among many failure causes, Electro-Static Discharge (ESD) is particularly serious. According to U.S. statistics, the U.S. electronics industry loses as much as 10 billion U.S. dollars each year due to electrostatic hazards, and British electronic products lose 2 billion pounds each year due to static electricity. Among the substandard electronic components in Japan, the harm caused by electrostatic discharge is less than 10 billion U.S. dollars. Less than 45%. Therefore, ESD protection and corresponding design must be paid attention to. The principle of ESD protection is: the ESD protectio...

AI Technical Summary

Problems solved by technology

However, the interdigitated device will cause the local current density of the ESD protection device to be too high due to uneven current discharge, and the local overheating of the device will cause thermal failure.

Therefore, the premature failure of the device will lead to the failure of the potential protection ability of the device itself, and the reduction of the discharge efficiency.

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