Waffle island type diode triggered silicon controlled electrostatic protection device

A technology of electrostatic protection devices and diodes, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of failure to exert the protection ability of devices, high current density of ESD protection devices, and reduced discharge efficiency, etc., to achieve High electrostatic discharge capacity per unit area, improved device discharge efficiency, and enhanced trigger voltage

Active Publication Date: 2018-01-05
XIANGTAN UNIV
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  • Abstract
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Problems solved by technology

However, the interdigitated device will cause the local current density of the ESD protection device to be too high due to uneven current discharge, and the local overheating of the device will ca

Method used

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  • Waffle island type diode triggered silicon controlled electrostatic protection device
  • Waffle island type diode triggered silicon controlled electrostatic protection device
  • Waffle island type diode triggered silicon controlled electrostatic protection device

Examples

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[0022] The present invention will be further described below in conjunction with the drawings and embodiments.

[0023] Such as image 3 As shown, the present invention includes a P-type substrate 100 and a BN buried layer 200 formed in the P-type substrate 100. The BN buried layer 200 is provided with a high-voltage N-well 300; On the right, a first P-well 401, a first P-base injection layer 501, a second P+ injection area 701, a third N+ injection area 702, a third P+ injection area 703, a second P-base injection layer 502, and a Two P-wells 402, the first P-base injection layer 501 is connected to the first P-well 401, and the second P-base injection layer 502 is connected to the second P-well 402; the first P-well 401 is from left to On the right, a first P+ implantation region 601, a first N+ implantation region 602, and a second N+ implantation region 603 are arranged in sequence. The second N+ implantation region 603 straddles the first P-base implant layer 501; in the sec...

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Abstract

The invention discloses a waffle island type diode triggered silicon controlled electrostatic protection device. The waffle island type diode triggered silicon controlled electrostatic protection device comprises a P type substrate and a BN buried layer inside the P type substrate, wherein a high-voltage N trap is arranged on the BN buried layer; a first P trap, a first P-base injection layer, a second P+ injection area, a third N+ injection area, a third P+ injection area, a second P-base injection layer and a second P trap are arranged on the high-voltage N trap in sequence from left to right; a first P+ injection area, a first N+ injection area and a second N+ injection area are arranged inside the first P trap in sequence from left to right; and a fourth N+ injection area, a fifth N+ injection area and a fourth P+ injection area are arranged inside the second P trap in sequence from left to right. The device is embedded in a parallel island type diode, the electrostatic discharge capacity of the device is strengthened while the trigger voltage of the device is reduced, and discharge efficiency of the device is improved by adopting a waffle type array to implement layout.

Description

technical field [0001] The invention relates to the field of electrostatic protection of integrated circuits, in particular to a waffle-shaped island-type diode triggering a thyristor electrostatic protection device. Background technique [0002] With the improvement of process technology, the reliability problem has become a bottleneck restricting the development of integrated circuits. Among many failure causes, Electro-Static Discharge (ESD) is particularly serious. According to U.S. statistics, the U.S. electronics industry loses as much as 10 billion U.S. dollars each year due to electrostatic hazards, and British electronic products lose 2 billion pounds each year due to static electricity. Among the substandard electronic components in Japan, the harm caused by electrostatic discharge is less than 10 billion U.S. dollars. Less than 45%. Therefore, ESD protection and corresponding design must be paid attention to. The principle of ESD protection is: the ESD protectio...

Claims

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Application Information

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IPC IPC(8): H01L27/02
Inventor 金湘亮郑亦菲汪洋
Owner XIANGTAN UNIV
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