Power semiconductor devices with fully depleted channel regions
A power semiconductor, semiconductor technology, applied in the direction of semiconductor devices, electrical components, diodes, etc., can solve problems such as load damage of power semiconductor devices
Active Publication Date: 2020-12-29
INFINEON TECH AG
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0007] An uncontrolled change from a blocking state to a conducting state or vice versa can cause significant damage to the power semiconductor device and / or the load it can be connected to
Method used
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[0025] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced.
[0026] In this regard terms such as "top", "bottom", "front", "rear", "back", "head", "tail", "below", "above" etc. may refer to the described The orientation of the graph is used. Because parts of the embodiments may be oriented in a number of different orientations, directional terminology is used for purposes of illustration, not limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not to be taken in a limiting sense, and the scope of the invention is defined by the appended claims.
[0027] Reference will now be made in detail to various embodiments, one or more examples ...
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The present application relates to power semiconductor devices with fully depleted channel regions. It includes: a semiconductor body coupled to first and second load terminal structures and conducting a load current; first and second cells each electrically connected on one side to the first load terminal structure and on the other side to the A drift region of the semiconductor body, the drift region having a first conductivity type; a first mesa in the first cell comprising a first port region having the first conductivity type and electrically connected to the first load terminal structure and a first port region coupled to the drift region a channel region; a second mesa in the second cell, comprising a second port region having a second conductivity type and electrically connected to the first load terminal structure and a second channel region coupled to the drift region; Each of the first and second mesas is spatially confined by the insulating structure in a direction perpendicular to the direction of the internal load current and exhibits a total extension of less than 100 nm in this direction.
Description
technical field [0001] The present description relates to embodiments of power semiconductor devices. In particular, the present description relates to an embodiment of a power semiconductor device having a plurality of first and second cells, each cell having a channel region in a respective mesa, with a control electrode structure and a guide electrode insulated from the control electrode structure are provided. Background technique [0002] Many functions of modern equipment in automotive, consumer and industrial applications, such as converting electrical energy and driving electric motors or machines, rely on semiconductor devices. For example, insulated gate bipolar transistors (IGBTs), metal oxide semiconductor field effect transistors (MOSFETs), diodes, and the like have been used in a variety of applications including, but not limited to, switches in power supplies and power converters. [0003] A general aim is to keep the losses occurring at the semiconductor de...
Claims
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IPC IPC(8): H01L29/739H01L29/78H01L29/06
CPCH01L29/0692H01L29/0696H01L29/407H01L29/42376H01L29/7397H01L29/7804H01L29/7813H01L29/1033H01L29/1095H01L29/36H01L29/402H01L29/41708H01L29/41741H01L29/42364H01L29/7395H01L29/7802
Inventor A·毛德F-J·涅德诺斯塞德C·P·桑道
Owner INFINEON TECH AG