Electrostatic protection circuit of CLAMP type

An electrostatic protection and circuit technology, applied in the field of electrostatic protection circuits, can solve the problem that electrostatic protection circuits cannot be simulated and run, and achieves the effect of saving capital cost and time cost and improving the success rate

Active Publication Date: 2018-01-09
灿芯创智微电子技术(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] Aiming at the shortcomings that current CLAMP-type electrostatic protection circuits cannot discharge high electrostatic voltage through low-voltage devices and that GGNMOS-type electrostatic protection circuits cannot simulate and run, the purpose of

Method used

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  • Electrostatic protection circuit of CLAMP type
  • Electrostatic protection circuit of CLAMP type
  • Electrostatic protection circuit of CLAMP type

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[0039] The present invention will be further described below with reference to the drawings and embodiments.

[0040] Such as image 3 As shown, the invention provides a CLAMP type electrostatic protection circuit (the process used in the electrostatic protection circuit is 28nm; the electrostatic voltage is equal to VDD, VDD is 3.3V), and the electrostatic protection circuit is provided with a discharge circuit containing an NMOS tube , The bleeder circuit uses the sudden return conduction of the NMOS tube to discharge the electrostatic voltage. The working voltage of the NMOS tube is lower than the electrostatic voltage. The electrostatic protection circuit can be simulated by simulation software to obtain the operating parameters of the electrostatic protection circuit to ensure the first The success rate of sub-streaming.

[0041] The electrostatic protection circuit includes a first capacitor C1, a second capacitor C2, a third capacitor C3, a first resistor R1, a second resist...

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Abstract

The invention belongs to the technical field of the electrostatic protection circuit, and specifically relates to an electrostatic protection circuit of the CLAMP type. A leakage circuit containing aNMOS tube is arranged in an electrostatic protection circuit; the leakage circuit leaks the electrostatic voltage by using snapback conducting of the NMOS tube; the working voltage of the NMOS tube islower than the electrostatic voltage, and the electrostatic protection circuit can simulate the running through simulation software, improves the success rate of the first current sheet, the financing cost and the time cost are saved.

Description

technical field [0001] The invention belongs to the technical field of static electricity protection circuits, and in particular relates to a CLAMP type static electricity protection circuit. Background technique [0002] The development of integrated circuits has made the technology more and more advanced, and the size of MOS devices has become smaller and smaller. In order to obtain a smaller chip area, people always tend to use more advanced technology to realize chip design. However, as the size of MOS devices becomes smaller and smaller, the operating voltage of MOS devices is also lower and lower. For example, the 0.13um process can provide devices with a maximum voltage of 5V. In the 55nm and 40nm processes, only devices with a maximum voltage of 3.3V can be provided. Even in the 28nm process, only devices with a maximum voltage of 1.8V can be provided. [0003] Unfortunately, the voltage requirements of our application are fixed and will not be lowered due to the d...

Claims

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Application Information

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IPC IPC(8): H02H9/04
Inventor 陆敏
Owner 灿芯创智微电子技术(北京)有限公司
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