Bismuth-doped spherical zinc oxide gas sensing material and preparation method thereof

A gas sensing, zinc oxide technology, applied in chemical instruments and methods, zinc oxide/zinc hydroxide, bismuth compounds, etc., can solve problems such as high cost and complex synthesis process

Inactive Publication Date: 2018-01-12
CHONGQING TECH & BUSINESS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing method for preparing porous and hollow nanomaterials is the template method. The disadvantages of this method are: the synthesis proce

Method used

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  • Bismuth-doped spherical zinc oxide gas sensing material and preparation method thereof
  • Bismuth-doped spherical zinc oxide gas sensing material and preparation method thereof
  • Bismuth-doped spherical zinc oxide gas sensing material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Add 1mmol of zinc acetate and 0.5 mmol of sodium citrate into 20ml of deionized water, and stir magnetically for more than 20 minutes; slowly pour 8mmol of sodium hydroxide into the solution, and stir magnetically for more than 30 minutes; transfer to a reaction kettle, and heat at 120°C Insulate for 30 hours, cool to room temperature, and undergo solid-liquid separation, drying, and grinding to obtain bismuth-doped spherical zinc oxide powder with a doping ratio of 0:100, denoted as E0.

Embodiment 2

[0027] Add 1 mmol of zinc acetate, 0.5 mmol of sodium citrate and 0.01 mmol of bismuth citrate into 20 ml of deionized water, and stir magnetically for more than 20 minutes; slowly pour 8 mmol of sodium hydroxide into the solution, and stir magnetically for more than 30 minutes; transfer to the reaction Kettle, heated at 120°C for 30 hours, cooled to room temperature, solid-liquid separation, drying, and grinding to obtain bismuth-doped spherical zinc oxide powder with a doping ratio of 1:100, denoted as E1.

Embodiment 3

[0029] Add 1 mmol of zinc acetate, 0.5 mmol of sodium citrate and 0.025 mmol of bismuth citrate into 20 ml of deionized water, and stir magnetically for more than 20 minutes; slowly pour 8 mmol of sodium hydroxide into the solution, and stir magnetically for more than 30 minutes; transfer to the reaction Kettle, heated at 160°C for 20 hours, cooled to room temperature, solid-liquid separation, drying, and grinding to obtain bismuth-doped spherical zinc oxide powder with a doping ratio of 2.5:100, denoted as E2.

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Abstract

The invention discloses a bismuth-doped spherical zinc oxide gas sensing material and a preparation method thereof. The zinc oxide gas sensing material contains bismuth and zinc oxide, wherein bismuthis doped into a zinc oxide lattice in a doping mole ratio of (1-5.5) to 100. The preparation method comprises the following steps: (1) adding zinc acetate, sodium citrate and bismuth citrate into deionized water, and magnetically stirring for 20 minutes or longer until zinc acetate is completely dissolved into a solution; (2) slowly pouring a sodium hydroxide solution into the solution, and magnetically stirring for 30 minutes or longer; (3) transferring the solution into a reaction kettle, heating to 120-160 DEG C, maintaining the temperature for 10-30 hours, and after the reaction is finished, cooling to room temperature; and (4) carrying out solid-liquid separation on the obtained product, drying, and grinding, so as to obtain bismuth-doped spherical zinc oxide powder. The preparationmethod has the advantage that the gas sensing performance of the material is improved.

Description

technical field [0001] The invention relates to the field of zinc oxide materials, in particular to a bismuth-doped spherical zinc oxide gas sensing material and a preparation method thereof. Background technique [0002] Zinc oxide is an excellent semiconductor material. The conductivity of ZnO thin film material will change greatly with the type and concentration of gas adsorbed on the surface. This property can be used to make surface type gas sensor. ZnO thin film material is the earliest research and the most widely used It is one of the most widely used semiconductor gas-sensing materials, but the existing ZnO thin film materials have low sensitivity and high working temperature, generally 400~500℃. [0003] Hollow and porous inorganic nanomaterials have very broad application prospects. The excellent performance of nanomaterials with hollow and porous morphology is due to the large specific surface area and effective pores of this morphology, which can promote the phy...

Claims

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Application Information

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IPC IPC(8): C01G9/02C01G29/00B82Y30/00G01N27/04G01N27/12
Inventor 郭威威周麒麟
Owner CHONGQING TECH & BUSINESS UNIV
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