AlN template, light-emitting diode epitaxial wafer and production method thereof

Abstract

The invention discloses an AlN template, a light-emitting diode epitaxial wafer and a production method thereof and belongs to the field of semiconductor technologies. The AlN template comprises a substrate and an AlN thin film deposited on the substrate, wherein the AlN thin film comprises a first AlN thin film part, an inserted layer and a second AlN thin film part which are sequentially stacked, the inserted layer comprises multiple AlNO sub-layers, and oxygen content in the multiple AlNO sub-layers is increased layer by layer and then decreased layer by layer along the stacking direction of the multiple AlNO sub-layers. A part of O atoms in the AlNO sub-layers can replace N atoms, the other part of O atoms can form gap-filling atoms, both the replacing O atoms and the gap-filling O atoms can make AlN lattices distort to a certain extent, therefore, the lattice constant of the AlN thin film is increased, the lattice constant of the AlN thin film is more approximate to the lattice constant of a subsequent GaN epitaxial thin film, pressing stress in a GaN material can be reduced beneficially, warping of the epitaxial wafer is relieved, and then wavelength uniformity of an epitaxial layer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlN template, a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED, and the existing GaN-based LED epitaxial wafer includes a sapphire substrate and a GaN epitaxial layer grown on the sapphire substrate. Since there are lattice mismatch and thermal mismatch problems between sapphire and GaN materials, and there is only a small lattice mismatch between AlN materials, GaN materials and sapphire substrates, AlN is often ...

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Problems solved by technology

[0005] Since there is still a lattice mismatch problem between the AlN material and the sapphire substrate, there will still be stress between the AlN buffer layer and the sapphire substrate, and as the thickness of the AlN film gradually increases, the stress accumulated inside the AlN film will decrease. Gradually increases, resulting in larger warpage of the epitaxial wafer, making the wavelength uniformity of the epitaxial wafer worse

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