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Preparation method of nanoscale polymer brush pattern on silicon surface of ps-b-p2vp template

A polymer brush, ps-b-p2vp technology, applied in the field of polymer chemistry, can solve the problems of cumbersome operations, small areas that can only produce a few millimeters, and expensive machines

Active Publication Date: 2020-10-27
QIANNAN NORMAL UNIV FOR NATTIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems and shortcomings of the existing physical nano-etching technology that requires expensive machines, high cost, cumbersome operation, labor-intensive, and can only produce a small area of ​​a few millimeters, the present invention provides a PS-b-P 2 The preparation method of nano-scale polymer brush patterns on the silicon surface of the VP template, which can produce densely arranged fingerprint-like and linear nanostructures of ≤100nm on the silicon surface in large quantities and in large areas, and is low in cost and easy to operate, and uses PS -b-P 2 The change of VP molecular weight, composition and environmental conditions can be precisely adjusted between 10-100nm

Method used

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  • Preparation method of nanoscale polymer brush pattern on silicon surface of ps-b-p2vp template
  • Preparation method of nanoscale polymer brush pattern on silicon surface of ps-b-p2vp template
  • Preparation method of nanoscale polymer brush pattern on silicon surface of ps-b-p2vp template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Example 1: PS-b-P 2 Preparation of Nanoscale Polymer Brush Patterns on Silicon Surface of VP Template:

[0061] (1) Cleaning of silicon wafers: Blow the cut monocrystalline silicon (1.0cm×1.0cm) clean with nitrogen, and use the standard RCA cleaning technology of the semiconductor industry to process the silicon wafers: first use 2:1H 2 SO 4 / H 2 o 2 Heat the solution at 100°C until no bubbles are generated, sonicate with ultrapure water for 5 minutes; then use 1:1:5NH 3 .H 2 O / H 2 o 2 / H 2 O solution was boiled at 60°C for 10 minutes, ultrapure water was ultrasonicated for 5 minutes; then in 1:1:6 HCl / H 2 o 2 / H 2 The O solution was boiled at 60°C for 10 minutes, ultrapure water was sonicated until the solution became neutral, blown dry with nitrogen gas for later use, and the remaining silicon wafers were stored in ultrapure water.

[0062] (2) Preparation of polymer template: Polystyrene-block-poly(2-vinylpyridine) (PS-b-P 2 VP) was dissolved in toluene a...

Embodiment 2

[0067] Example 2: PS-b-P 2 Preparation of Nanoscale Polymer Brush Patterns on Silicon Surface of VP Template:

[0068] (1) Cleaning of silicon wafers: Blow off the cut monocrystalline silicon (1.0cm×1.0cm) with nitrogen, and use the standard RCA cleaning technology of the semiconductor industry to process the silicon wafers: first use 3:1H 2 SO 4 / H 2 o 2 Heat the solution at 120°C until no bubbles are generated, sonicate with ultrapure water for 15 minutes; then use 1:1:5 NH 3 .H 2 O / H 2 o 2 / H 2 O solution was boiled at 80°C for 20min, ultrapure water was ultrasonicated for 15min; then in 1:1:6 HCl / H 2 o 2 / H 2 The O solution was boiled at 80°C for 20 minutes, ultrapure water was sonicated until the solution became neutral, blown dry with nitrogen gas for later use, and the remaining silicon wafers were stored in ultrapure water.

[0069] (2) Preparation of polymer template: Polystyrene-block-poly(2-vinylpyridine) (PS-b-P 2 VP) was dissolved in toluene and stirre...

Embodiment 3

[0074] Example 3: PS-b-P 2 Preparation of Nanoscale Polymer Brush Patterns on Silicon Surface of VP Template:

[0075](1) Cleaning of silicon wafers: Blow off the cut monocrystalline silicon (1.0cm×1.0cm) with nitrogen, and use the standard RCA cleaning technology of the semiconductor industry to process the silicon wafers: first use 4:1H 2 SO 4 / H 2 o 2 Heat the solution at 100-140°C until no bubbles are generated, and use ultrapure water to sonicate for 25 minutes; then use 1:1:5NH 3 .H 2 O / H 2 o 2 / H 2 O solution was boiled at 90°C for 30 minutes, ultrapure water was ultrasonicated for 25 minutes; then in 1:1:6 HCl / H 2 o 2 / H 2 The O solution was boiled at 90°C for 30 minutes, ultrapure water was sonicated until the solution became neutral, blown dry with nitrogen gas for later use, and the remaining silicon wafers were stored in ultrapure water.

[0076] (2) Preparation of polymer template: Polystyrene-block-poly(2-vinylpyridine) (PS-b-P 2 VP) was dissolved in...

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Abstract

The present invention provides a method for preparing the silicon surface nano-scale polymer brush pattern of a PS-b-P2VP template. According to the present invention, the densely-arranged fingerprint-shaped linear nanometer structure with the size of less than or equal to 100 nm can be subjected to large-batch and large-area production on the silicon surface by using the simple and easy-performing method, such that the cost is low, the operation is easy, and the problem and the disadvantage that the existing physical nanometer etching technology needs the expensive machine, has the disadvantages of high cost, complicated operation and labor intensiveness, and can only produce the small-area structure with the size of several mm can be overcome; and by changing the molecular weight of thePS-b-P2VP, the components and the environmental conditions, the precise regulation between 10-100 nm can be achieved.

Description

technical field [0001] The invention belongs to the technical field of polymer chemistry, in particular to PS-b-P 2 A method for preparing a nanoscale polymer brush pattern on a silicon surface of a VP template. Background technique [0002] Precise nanopatterning on the surface of relevant semiconductors, such as silicon and germanium, is one of the directions for future applications. Most of the current polymer brush patterning techniques for silicon surfaces are at the micrometer scale, and less so at the nanometer scale. Most of the technologies focus on physical methods such as imprinting, lithography, and scanning probe tip lithography, but the cost of making nano-patterns is high, the operation is cumbersome, and it is only suitable for small-area production. [0003] Although lithography has always had an advantage in sub-100nm patterning, short-wavelength light sources such as EUV, excitation source lasers, and synchrotron radiation sources, these technologies hav...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F120/06
Inventor 路小彬徐平
Owner QIANNAN NORMAL UNIV FOR NATTIES