3D computer flash memory device and manufacturing method thereof, and buffer layer manufacturing method

Abstract

The invention discloses a 3D computer flash memory device and a manufacturing method thereof, and a buffer layer manufacturing method. The manufacturing method includes the following steps: providinga substrate; forming a stacked structure on the surface of the substrate, wherein the stacked structure includes multilayer oxide layers and multilayer nitride layers, and the oxide layers and the nitride layers are alternately arranged; forming a first channel through hole penetrating the stacked structure and extending into the surface of the substrate, wherein the width of the first channel through hole gradually increases from bottom to top; forming a channel structure on the surface of the substrate exposed by the first channel through hole; forming a function layer on the sidewall of thefirst channel through hole and on the surface of the channel structure; forming a buffer layer on the surface of the function layer, wherein the buffer layer has the minimum thickness at the bottom,and the sidewall thickness gradually increases from bottom to top; and forming a second channel through hole penetrating the bottom of the buffer layer and the bottom of the function layer, and exposing part of the channel structure. According to the technical scheme of the invention, corrosion damage to the function layer can be completely avoided, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of storage devices, and more specifically, relates to a three-dimensional computer flash memory device, a manufacturing method thereof, and a buffer layer manufacturing method. Background technique [0002] With the continuous development of science and technology, more and more electronic devices are applied to people's daily life and work, bringing great convenience to people's daily life and work, and becoming an indispensable tool for people today. Memory is an important component of many electronic devices. As the functions of electronic devices become more and more powerful, more and more data is required in the memory, and the memory capacity of the memory is required to be larger and larger. [0003] The three-dimensional computer flash memory device (3D NAND) stacks storage units in the direction perpendicular to the substrate, and can form more storage units in a smaller area. Compared with traditi...

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Problems solved by technology

However, when etching to form a new channel hole, it needs to penetrate the bottom of the buffer layer and the functional layer, which leads to the fact that the buffer layer cannot completely prevent the functional layer from being damaged during the etching process, which affects the reliability of the device.

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