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AC light-emitting diode chip and manufacturing method therefor

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve the problems such as the need to improve the luminous brightness ratio of AC LED chips, limited DC voltage, and limited reverse breakdown voltage of sub-chips, etc. Achieve the effect of being conducive to lateral expansion and uniform distribution, improving reliability, and avoiding excessive local current

Active Publication Date: 2018-01-19
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Limited by the reverse breakdown voltage of the sub-chips, the bridge rectifier circuit formed by four sub-chips can provide limited DC voltage, and can only drive three sub-chips connected in series to emit light normally at most, and only 5 / 7 at the same time. (about 70%) of the sub-chips emit light, and the luminous brightness of the AC LED chip and the proportion of the sub-chips that emit light need to be improved

Method used

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  • AC light-emitting diode chip and manufacturing method therefor
  • AC light-emitting diode chip and manufacturing method therefor
  • AC light-emitting diode chip and manufacturing method therefor

Examples

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Embodiment 1

[0044] An embodiment of the present invention provides an AC light emitting diode chip, figure 1 For the top view of the structure of the AC light-emitting diode chip, see figure 1 The AC light emitting diode chip includes a substrate 30, a plurality of sub-chips distributed on the substrate 30 at intervals, and a metal electrode 40 connecting a plurality of sub-chips, and a plurality of sub-chips includes four first sub-chips 11-14 and a plurality of second sub-chips. Sub-chip 21-27 ( figure 1 Taking seven second sub-chips as an example, the number of the second sub-chips is not limited thereto), four first sub-chips 11-14 are connected to form a bridge rectifier circuit, and a plurality of second sub-chips 21-27 are connected in series Between the two DC output terminals of the bridge rectifier circuit.

[0045] specifically, figure 2 It is the connection circuit diagram of each sub-chip in the AC light-emitting diode chip, see figure 2, the bridge rectifier circuit in...

Embodiment 2

[0088] An embodiment of the present invention provides a method for fabricating an AC light-emitting diode chip, which is suitable for fabricating the AC light-emitting diode chip provided in Embodiment 1, see Figure 6 , the production method includes:

[0089] Step 101: growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer sequentially on a substrate.

[0090] In this embodiment, the N-type semiconductor layer includes a first N-type GaN layer, a Ni-doped GaN layer, and a second N-type GaN layer stacked in sequence.

[0091] In practical applications, after step 101 is executed, a reverse breakdown voltage test can be performed, and products with reverse breakdown voltage can be screened out for subsequent steps to form an AC light-emitting diode chip. In this way, the reverse breakdown voltage of the bridge rectifier circuit formed by the first sub-chip can usually be increased by more than 5V, thereby increasing the number of seco...

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Abstract

The invention discloses an AC light-emitting diode chip and a manufacturing method therefor, and belongs to the technical field of semiconductors. The chip comprises a substrate, a plurality of subchips, and a metal electrode. The plurality of subchips comprises four first subchips and a plurality of second subchips, wherein the four first subchips are connected to form a bridge rectification circuit, and the plurality of second subchips are connected between two DC output ends of the bridge rectification circuit. Each subchip comprises an N-type semiconductor layer, a light-emitting layer, aP-type semiconductor layer, an insulating protection layer and a transparent conductive layer, wherein the P-type semiconductor layer is provided with a first groove extending to the corresponding N-type semiconductor layer, and the N-type semiconductor layer in the corresponding first groove is provided with a second groove extending to a substrate, and the second groove is located between two adjacent subchips. Each N-type semiconductor layer comprises a first N-type gallium nitride layer, a nickel-doped gallium nitride layer, and a second N-type gallium nitride layer. The chip can improve the reverse breakdown voltage, and increase the number of subchips which emit light at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AC light-emitting diode chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a new generation of solid-state lighting source with high efficiency, environmental protection and green. It has the advantages of low voltage, low power consumption, small size, light weight, long life and high reliability. It is used in traffic signal lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display screens and other fields. [0003] The chip is the heart of the LED. The monolithic chip only allows current to flow in one direction. If the mains supplying AC power is directly loaded to both ends of the monolithic chip, the chip can only emit light intermittently. In order to enable the chip to continuously emit light, four sub-chi...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/02H01L33/32
Inventor 兰叶顾小云杨春艳吴志浩王江波刘榕
Owner HC SEMITEK ZHEJIANG CO LTD