A kind of AC light-emitting diode chip and its manufacturing method
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of limited DC voltage, the ratio of luminous brightness of AC LED chips needs to be improved, and the reverse breakdown voltage of limited sub-chips, etc. Improve reliability, facilitate lateral expansion and uniform distribution, and avoid the effect of excessive local current
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Embodiment 1
[0044] An embodiment of the present invention provides an AC light emitting diode chip, figure 1 For the top view of the structure of the AC light-emitting diode chip, see figure 1 The AC light emitting diode chip includes a substrate 30, a plurality of sub-chips distributed on the substrate 30 at intervals, and a metal electrode 40 connecting a plurality of sub-chips, and a plurality of sub-chips includes four first sub-chips 11-14 and a plurality of second sub-chips. Sub-chip 21-27 ( figure 1 Taking seven second sub-chips as an example, the number of the second sub-chips is not limited thereto), four first sub-chips 11-14 are connected to form a bridge rectifier circuit, and a plurality of second sub-chips 21-27 are connected in series Between the two DC output terminals of the bridge rectifier circuit.
[0045] specifically, figure 2 It is the connection circuit diagram of each sub-chip in the AC light-emitting diode chip, see figure 2, the bridge rectifier circuit in...
Embodiment 2
[0088] An embodiment of the present invention provides a method for fabricating an AC light-emitting diode chip, which is suitable for fabricating the AC light-emitting diode chip provided in Embodiment 1, see Figure 6 , the production method includes:
[0089] Step 101: growing an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer sequentially on a substrate.
[0090] In this embodiment, the N-type semiconductor layer includes a first N-type GaN layer, a Ni-doped GaN layer, and a second N-type GaN layer stacked in sequence.
[0091] In practical applications, after step 101 is executed, a reverse breakdown voltage test can be performed, and products with reverse breakdown voltage can be screened out for subsequent steps to form an AC light-emitting diode chip. In this way, the reverse breakdown voltage of the bridge rectifier circuit formed by the first sub-chip can usually be increased by more than 5V, thereby increasing the number of seco...
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Abstract
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