A method for improving the luminous efficiency of high-voltage LED chips

Abstract

The invention provides a method for improving light-emitting efficiency of a high-voltage LED chip. The method comprises the steps 1, growing SiO2 to form a current barrier layer (CBL), and photoetching the CBL to obtain a first designated pattern; 2, growing ITO, performing Mesa photoetching, performing Mesa photoetching after corrosion of the ITO, and photoetching a second designated pattern; 3,photoetching a third designated pattern, and controlling an angle of an inclined surface of an etching groove to be 60-85 degrees; 4, growing an insulation layer SiO2, removing remaining SiO2, and reserving the SiO2 at a bridging part and a part of a light-emitting surface to obtain a fourth designated pattern; 5, filling the groove with positive photoresist, and making a fifth designated pattern; and 6, photoetching a sixth designated pattern by employing negative photoresist, and evaporating PN electrode metal. By the preparation method, ITO photoetching and MESA photoetching are combined,the insulation layer photoetching and the passivation layer SiO2 photoetching are combined, and the flow is simplified; the groove area is small, the light-emitting area is expanded, and the light-emitting efficiency is improved; the dry etching process is easier to control, and an electric leakage potential of a broken line is prevented, the voltage is reduced, and the working lifetime of a product is prolonged.

Description

technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a method for improving the luminous efficiency of a high-voltage LED chip. Background technique [0002] High-voltage (HV) LED chips are made by connecting multiple chips in series to emit light in the LED chip preparation stage, reducing the number of welding wires in downstream packaging factories, improving their production efficiency and saving costs, and the reliability of the package increases with the reduction in the number of welding wires. promote. [0003] To achieve series connection of high-voltage chips, GaN must be divided into several units, and the units must be insulated. This is the biggest difference between high-voltage chips and ordinary chips. Such as figure 1 As shown, it is a partial side view of the trench formed by the high-voltage chip preparation method in the prior art. At present, the high-voltage chip is divided by dry etching of the GaN lay...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for improving the luminous efficiency of high-voltage LED chips, which is used to solve the problems of large groove area ratio, small luminous surface, and low luminous efficiency in the current high-voltage LED chip manufacturing process. Low cost, difficult control of dry etching process and easy short-circuit and disconnection of products

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