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A short cavity long surface emitting laser and its manufacturing method

A technology for emitting lasers and manufacturing methods, applied to lasers, laser components, semiconductor lasers, etc., can solve problems such as process difficulties, achieve the effects of reducing coating processes, improving utilization, reliability and consistency guarantee

Active Publication Date: 2020-11-24
WUHAN HUAGONG GENUINE OPTICS TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a short-cavity long-surface-emitting laser and its manufacturing method. By integrating a section of passive waveguide regions on both sides of the gain region, the problem of difficult process caused by the small cavity length is solved.

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  • A short cavity long surface emitting laser and its manufacturing method
  • A short cavity long surface emitting laser and its manufacturing method
  • A short cavity long surface emitting laser and its manufacturing method

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see figure 1 , figure 2 as well as image 3 , an embodiment of the present invention provides a method for manufacturing a short cavity long surface emitting laser, comprising the following steps: S1, select a substrate 1, and grow a buffer layer 2 on the substrate 1; S2, on the buffer layer 2 Growth intermediate layer; meanwhile, make grating layer 6 on described buffer layer 2, and described grating layer 6 is positioned at the opposite two sides o...

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Abstract

The present invention relates to the field of optoelectronic devices, and provides a method for manufacturing a short cavity long surface emitting laser, comprising the following steps: S1, select a substrate, and grow a buffer layer on the substrate; S2, grow on the buffer layer Intermediate layer; meanwhile, fabricate a grating layer on the buffer layer, the grating layer is located on opposite sides of the intermediate layer; the intermediate layer includes a lower waveguide layer, a multi-quantum well layer and an upper waveguide layer that grow upwards in sequence ; The middle layer is connected to the laser gain region, and the two grating layers are respectively connected to the passive waveguide growth region; S3, sequentially growing a stop layer, a cladding layer and a contact layer above the upper waveguide layer; S4, making a ridge waveguide, isolation region and contact strip; S5, making P-face electrode and N-face electrode, and cutting the substrate thin; S6, stripping and stripping. The invention integrates a passive waveguide area on both sides of the gain area, which solves the problem of difficult process caused by the small cavity length.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a short cavity long surface emitting laser and a manufacturing method thereof. Background technique [0002] The system upgrade of the optical network all benefits from the upgrade of the optical device. As the core component of the optical device, the performance of the laser restricts the performance of the entire system. Lasers that can achieve a single-channel baud rate of 25Gb / s or even better are urgently needed. demand. [0003] At present, there are two main schemes for high-speed modulated lasers. The first is distributed feedback laser monolithic integrated electro-absorption modulators (EMLs). EMLs are not affected by frequency chirp characteristics, and have relatively good extinction ratio and clear eye diagram. , very suitable for long-distance transmission systems. However, the manufacturing process is relatively complicated, and the power consumption is rel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/18H01S5/183
Inventor 陈鑫李鸿建韩宇
Owner WUHAN HUAGONG GENUINE OPTICS TECH
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