Unlock instant, AI-driven research and patent intelligence for your innovation.

Rough lead frame with silver nanolayer

一种纳米层、引线框的技术,应用在半导体/固态器件零部件、半导体器件、电气元件等方向,能够解决引线框增大表面可湿性等问题

Active Publication Date: 2020-10-27
STMICROELECTRONICS SDN BHD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Unfortunately, however, the roughened surface of the leadframe also increases the wettability of the surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rough lead frame with silver nanolayer
  • Rough lead frame with silver nanolayer
  • Rough lead frame with silver nanolayer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] It will be understood that, while specific embodiments of the disclosure have been described herein for purposes of illustration, various modifications may be made without departing from the spirit and scope of the disclosure.

[0016] In the following description, certain specific details are set forth in order to provide a thorough understanding of various aspects of the disclosed subject matter. However, the disclosed subject matter may be practiced without these specific details. In some instances, well-known structures and semiconductor processing methods (eg, semiconductor power devices) including embodiments of the subject matter disclosed herein have not been described in detail so as not to obscure the description of other aspects of the present disclosure.

[0017] Figure 1A is a top-down view of a semiconductor package without encapsulation material according to one embodiment. Figure 1B yes Figure 1A The semiconductor package in the Figure 1A A close-up...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Rough leadframes with silver nanolayers are disclosed. One or more embodiments relate to leadframes and leadframe semiconductor packages. One embodiment involves a copper leadframe having one or more die pads and one or more leads having a roughened surface. Covering the roughened surface of the die pad of the leadframe is a silver (Ag) nanolayer. The thickness of the nanolayer preferably has a thickness corresponding to the roughened surface of the copper lead frame. For example, in one embodiment, the copper leadframe is roughened to have peaks and valleys averaging about 10 nanometers and the thickness of the nanolayer is 10 nanometers. Covering a portion of this Ag nanolayer is an Ag microlayer that provides a suitable bonding surface for coupling the semiconductor die to the die pad through the adhesive material.

Description

technical field [0001] Embodiments of the present disclosure relate to lead frame packages and methods of manufacturing the same. Background technique [0002] Leadframe packages are widely used in the semiconductor industry and, in general, provide a low cost solution with relatively straightforward assembly handling. However, various barriers remain to maintaining proper adhesion between certain materials within a leadframe package. [0003] To improve leadframe adhesion, one or more surfaces of the leadframe may be roughened. In that regard, materials such as adhesives and encapsulants may adhere better to the surface of the lead frame during assembly handling. [0004] Unfortunately, however, the roughened surface of the lead frame also increases the wettability of the surface. Accordingly, adhesive material used to couple the semiconductor die or chip to the roughened surface of the leadframe may flow or bleed over the roughened surface of the leadframe due to capill...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/495H01L21/60
CPCH01L2924/181H01L2924/143H01L2924/141H01L23/3121H01L23/49503H01L23/49575H01L24/32H01L2224/04042H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/48464H01L2224/73265H01L2224/83192H01L2224/83385H01L2224/83439H01L2224/85385H01L2224/85439H01L2224/92247H01L24/29H01L24/48H01L24/49H01L24/83H01L24/85H01L24/92H01L2224/05554H01L2224/291H01L2224/29116H01L2224/49173H01L2224/49175H01L2224/83815H01L2924/15747H01L2924/3512H01L2924/00014H01L23/49513H01L23/49548H01L23/49582H01L2924/00012H01L2924/0105H01L2924/01047H01L2924/014H01L2224/45099
Inventor 王远丰
Owner STMICROELECTRONICS SDN BHD