Elemental semiconductor lateral super-junction double-diffused transistor with multi-ring electric field modulation substrate
A semiconductor and double-diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of substrate-assisted depletion SAD, uneven surface electric field distribution, etc.
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[0037] Such as figure 1 and figure 2 is an elemental semiconductor lateral superjunction double-diffused transistor with a multi-ring electric field modulation substrate:
[0038] Elemental semiconductor material substrate 1, the doping concentration is the concentration of general elemental semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;
[0039] a base region 2 located on the surface of the elemental semiconductor substrate;
[0040] Implant N-columns and P-columns on the elemental semiconductor substrate at the edge of the base region, and arrange them alternately to form superjunction (SuperJunction) drift regions 5 and 6;
[0041] a source region 3 located on the surface of the base region;
[0042] The drain region 4 located on the surface of the super junction drift region;
[0043] A multi-ring electric field modulation structure located under the superjunction drift region;
[0044] Specifically:
[0045] The rings...
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