Wide bandgap semiconductor lateral double-diffusion transistor with multi-ring electric field modulation substrate

Abstract

The invention discloses a wide bandgap semiconductor lateral double-diffusion transistor with a multi-ring electric field modulation substrate. According to the structure of the transistor, a substrate below a drift region is a charge-compensation multi-ring structure; the multi-ring charge compensation of the substrate can extend the longitudinal space charge region of a lateral double-diffusionmetal oxide semiconductor field effect transistor; the multi-ring structure can also introduce new electric field peaks to the distribution of a surface lateral electric field and the distribution ofan in-body longitudinal electric field; and an electric field modulation effect is utilized to simultaneously modulate the surface lateral electric field and the in-body longitudinal electric field sothat the surface lateral electric field and the in-body longitudinal electric field are simultaneously optimized. With the charge-compensation multi-ring structure adopted, the problem of breakdown voltage saturation of the lateral double-diffusion transistor caused by longitudinal withstand voltage limitation can be solved; the surface lateral electric field and the in-body longitudinal electricfield are simultaneously optimized; and the breakdown voltage of a device can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a lateral double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (Lateral Double-diffused MOSFET, LDMOS for short) has the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-sub conduction, small power drive, and switching speed. Advanced advantages are at the heart of smart power circuits and high-voltage devices. Portable power management and automotive electronics are receiving increasing attention worldwide due to the growing market demand for portable power management and automotive electronics. [0003] However, due to the limitations of the first two generations of semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have b...

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Problems solved by technology

However, as the length of the device drift region increases, the breakdown voltage of the device is mainly limited by the vertical withstand voltage capability in the body, that is, due to the voltage saturation effect of the lateral power device, the breakdown voltage of the device gradually tends to saturation

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