Wide bandgap semiconductor lateral double-diffusion transistor with multi-ring electric field modulation substrate

A lateral double-diffusion and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limited breakdown voltage of devices and longitudinal withstand voltage capability

Active Publication Date: 2018-03-16
XIDIAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the length of the device drift region increases, the breakdown voltage of the device is mainly limited by the vertical withstand voltage capability in the body, that is, due to the voltage saturation effect of the lateral power device, the breakdown voltage of the device gradually tends to saturation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wide bandgap semiconductor lateral double-diffusion transistor with multi-ring electric field modulation substrate
  • Wide bandgap semiconductor lateral double-diffusion transistor with multi-ring electric field modulation substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] like figure 1 and figure 2 Shown is a wide-bandgap semiconductor lateral double-diffusion transistor with a multi-ring electric field modulated substrate:

[0039] Wide band gap semiconductor material substrate 1, the doping concentration is the concentration of general wide band gap semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;

[0040] The base region 2 and the drift region 5 located on the surface of the wide band gap semiconductor substrate;

[0041] The source region 3 on the surface of the base region;

[0042] Drain region 4 on the surface of the drift region;

[0043] A multi-loop electric field modulation structure located under the drift region;

[0044] Each ring 6, 7, 8 and 9 of the multi-ring electric field modulation structure can be N-type, P-type doped silicon material, and the typical doping concentration reaches 1×10 14 cm -3 ~1×10 16 cm -3 ;

[0045] Each ring 6, 7, 8 and 9 of the multi-ring e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a wide bandgap semiconductor lateral double-diffusion transistor with a multi-ring electric field modulation substrate. According to the structure of the transistor, a substrate below a drift region is a charge-compensation multi-ring structure; the multi-ring charge compensation of the substrate can extend the longitudinal space charge region of a lateral double-diffusionmetal oxide semiconductor field effect transistor; the multi-ring structure can also introduce new electric field peaks to the distribution of a surface lateral electric field and the distribution ofan in-body longitudinal electric field; and an electric field modulation effect is utilized to simultaneously modulate the surface lateral electric field and the in-body longitudinal electric field sothat the surface lateral electric field and the in-body longitudinal electric field are simultaneously optimized. With the charge-compensation multi-ring structure adopted, the problem of breakdown voltage saturation of the lateral double-diffusion transistor caused by longitudinal withstand voltage limitation can be solved; the surface lateral electric field and the in-body longitudinal electricfield are simultaneously optimized; and the breakdown voltage of a device can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a lateral double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor (Lateral Double-diffused MOSFET, LDMOS for short) has the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-sub conduction, small power drive, and switching speed. Advanced advantages are at the heart of smart power circuits and high-voltage devices. Portable power management and automotive electronics are receiving increasing attention worldwide due to the growing market demand for portable power management and automotive electronics. [0003] However, due to the limitations of the first two generations of semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/0603H01L29/0611H01L29/0623H01L29/0684H01L29/66477H01L29/7816
Inventor 段宝兴杨银堂董自明
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap