Lateral double-diffused transistor for simultaneously optimizing element semiconductor by transverse and longitudinal electric fields
A lateral double-diffusion and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of limited optimization effect of lateral electric field
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[0043] Such as figure 1 , figure 2 and image 3 Shown is a horizontal double-diffused transistor with horizontal and vertical electric fields while optimizing elemental semiconductors:
[0044] Substrate 1 of elemental semiconductor material, the doping concentration is the concentration of general elemental semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;
[0045] a base region 2 and a drift region 5 located on the surface of the elemental semiconductor substrate;
[0046] a source region 3 located on the surface of said base region;
[0047] The drain region 4 located on the surface of the drift region;
[0048] Below the drift region at the drain end are vertical auxiliary depletion substrate buried layers 6 and 7;
[0049] The substrate region located below the drift region and close to the vertical auxiliary depleted substrate buried layer has partial charge compensation buried substrate layers 8 and 9 .
[0050] The vert...
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