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Device integrated with junction field effect transistor and manufacturing method thereof

A field-effect transistor and device technology, applied in the field of semiconductor manufacturing, can solve problems such as poor controllability, unstable JFET pinch-off voltage, etc.

Active Publication Date: 2018-03-09
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a device integrated with a junction field effect transistor to solve the problems of unstable pinch-off voltage and poor regulation of the traditional JFET.

Method used

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  • Device integrated with junction field effect transistor and manufacturing method thereof
  • Device integrated with junction field effect transistor and manufacturing method thereof
  • Device integrated with junction field effect transistor and manufacturing method thereof

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Embodiment Construction

[0027] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] It sho...

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Abstract

The invention relates to a device integrated with a junction field effect transistor and a manufacturing method thereof. The JFET region of the device comprises: a JFET source, a metal electrode of the JFET source, composite well region structures and a JFET metal gate, wherein the JFET source is of a first conductive type; the metal electrode is formed on the JFET source and is in contact with the JFET source; each composite well region structure is of a second conductive type, is arranged within a first conductive type region and comprises a first well and a second well in the first well, the ion concentration of the second well is greater than that of the first well, the composite well region structure is formed on each of two sides of the JFET source, and the JFET source extends transversely into the first well and the second well; and the JFET metal gate is arranged on the composite well region structures on two sides of the JFET source. By using a composite channel formed by a composite well region consisting of the first well and the second well, the channel depletion capability is enhanced, and the pinch-off voltage stability is strengthened. At the same time, the pinch-offvoltage can be accurately adjusted by adjusting the distance between the composite channels to meet different circuit application occasions.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a device integrated with a junction field effect transistor, and also to a method for manufacturing the device integrated with a junction field effect transistor. Background technique [0002] Integrating a high-voltage Junction Field-Effect Transistor (JFET) on a high-voltage process platform is an advanced development and concept in the field of smart power integrated circuits today, which can greatly improve the on-state performance of vertical power devices, and significantly Reducing the chip area is in line with the mainstream trend of today's smart power device manufacturing. [0003] The high-voltage integrated JFET with traditional structure can be realized with a relatively simple process, but its characteristics such as instability and poor regulation of the pinch-off voltage limit its large-scale application in the field of intelligent power integration. Con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/06H01L29/06
CPCH01L27/0207H01L27/0617H01L29/0603H01L29/0684H01L27/02H01L27/06H01L29/06
Inventor 顾炎程诗康张森
Owner CSMC TECH FAB2 CO LTD
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