Inlet gas mixing device used for plasma enhanced chemical vapor deposition (PECVD) equipment

Abstract

The invention discloses an inlet gas mixing device used for plasma enhanced chemical vapor deposition (PECVD) equipment. The inlet gas mixing device comprises a first gas inlet guide pipe, a second gas inlet guide pipe and a gas outlet, and further comprises a gas mixing box communicating with the first gas inlet guide pipe, the second gas inlet guide pipe and the gas outlet, and the gas mixing box is internally provided with a mazy type gas mixing channel. The inlet gas mixing device is additionally provided with the mazy type gas mixing channel, it is guaranteed that two kinds of process gases are sufficiently mixed before being fed into a reaction chamber of the PECVD equipment, and therefore the process gases can achieve an optimal reaction state.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an intake gas mixing device for PECVD equipment. Background technique [0002] With the development of the photovoltaic industry, the requirements for equipment in the industry are getting higher and higher, and the main production equipment includes PECVD (Plasma Vapor Deposition of Plasma Enhanced Chemistry) equipment. The equipment uses microwave or radio frequency to ionize the gas containing the constituent atoms of the film to form plasma locally, and the plasma is highly chemically active and easy to react, depositing the desired film on the substrate. In the production of photovoltaic cell substrates, the surface of the cell substrate needs to deposit a thin film in the reaction chamber of the PECVD equipment. The uniformity of the film thickness is the main performance parameter of the cell substrate. figure 1 It is the process gas conveying device before the process gas e...

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Problems solved by technology

In the production of photovoltaic cell substrates, the surface of the cell substrate needs to deposit a thin film in the reaction chamber of the PECVD equipment. The uniformity of the film thickness is the main performance parameter of the cell substrate. figure 1 It is the process gas conveying device before the process gas enters the reaction chamber in the existing PECVD equipment. The device includes a first air intake pipe 3 and a second air intake pipe 4. The two process gases are directly gathered and passed through the gas outlet 5 Sending to the reaction chamber, this mixing method is likely to cause insufficient mixing of the process gas, resulting in deviations in the coating process and affecting the uniformity of the film thickness

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