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Light-emitting element

A technology for light-emitting elements and light-emitting layers, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of reduced current flow and reduced luminous efficiency, and achieve the effect of preventing the reduction of luminous efficiency and the increase of forward voltage.

Active Publication Date: 2018-03-30
TOYODA GOSEI CO LTD
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  • Claims
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Problems solved by technology

JP-B-3912219 discloses a light-emitting element that can solve the problem of a decrease in luminous efficiency caused by a decrease in current flow at a portion far from an electrode

Method used

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  • Light-emitting element
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Examples

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Embodiment

[0050] figure 1 is a vertical sectional view showing the light emitting element 1 in the example. The light emitting element 1 emits ultraviolet light in the UV-B wavelength range (315nm to 280nm) or in the UV-C wavelength range (less than 280nm). The substrate area of ​​the light-emitting element 1 is not less than 0.4mm 2 And not more than 25mm 2 .

[0051] The light-emitting element 1 has: a base 10, an n-type semiconductor layer 11 on the base 10, a light-emitting layer 12 on the n-type semiconductor layer 11, a p-type semiconductor layer 13 on the light-emitting layer 12, an n electrode connected to the n-type semiconductor layer 11 14. A plurality of p-electrodes 15 connected to the p-type semiconductor layer 13, an n-pad electrode 16 connected to the n-electrode 14, a p-connection electrode 17 connected to the p-electrode 15, and a p-pad electrode connected to the p-connection electrode 17 18.

[0052] Light emitting layer 12 , p-type semiconductor layer 13 , n ele...

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Abstract

A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1-xN (0.5<=x<=1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductorlayer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2016-184861 filed on September 21, 2016, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to light emitting elements, and in particular, to ultraviolet light emitting elements. Background technique [0004] There is known a light-emitting element in which a light-emitting region is divided into a plurality of parts (for example, see JP-B-3912219). JP-B-3912219 discloses a light-emitting element that can solve the problem of a decrease in luminous efficiency caused by a decrease in current flow at a portion remote from an electrode. Contents of the invention [0005] A light-emitting element formed of a group III nitride semiconductor and emitting light in a short wavelength range called UV-B or UV-C has a semiconductor layer with a high Al composition. The light-emitting element can ...

Claims

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Application Information

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IPC IPC(8): H01L33/38
CPCH01L33/38H01L33/32
Inventor 竹中靖博斋藤义树松井慎一篠田大辅三木久幸篠原裕直
Owner TOYODA GOSEI CO LTD
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