A method for manufacturing a thick dielectric layer thin film multilayer packaging substrate
A technology for encapsulating substrates and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of affecting the reliability of hole wall metallization, the quality of hole walls is difficult to control, and the exposure is difficult to burst through once. Increase the difficulty of production, increase the production time, and the effect of smooth and dense hole wall
Active Publication Date: 2019-09-03
苏州华博电子科技有限公司
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Problems solved by technology
This method is simple and efficient, and is very practical for thin media below ten microns, but when faced with thick dielectric layers ranging from tens of microns to hundreds of microns, it is difficult to blast through the exposure at one time, the process window is narrow, and the quality of the hole wall is not easy to control , affecting the reliability of subsequent hole wall metallization
At the same time, photosensitive media materials are much more expensive than non-photosensitive media materials, which imposes a lot of cost pressure on mass production
[0006] To sum up, it can be seen that whether the thin-film multilayer packaging substrate adopts photosensitive or non-photosensitive media, the existing process methods can be well realized for thin dielectric layers, but for thick dielectric layers of tens of microns to hundreds of microns. face their own shortcomings
Method used
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Embodiment 1
[0031] Embodiment 1: the following table
[0032]
[0033] After each layer of circuit is completed, it is observed under a microscope that the metallization coverage of the interconnection hole is 100%, the conduction rate of the upper and lower layers of the circuit is 100%, and the on-resistance is less than 20 milliohms.
Embodiment 2
[0034] Embodiment 2, the following table
[0035]
[0036] After each layer of circuit is completed, it is observed under a microscope that the metallization coverage of the interconnection hole is 100%, the conduction rate of the upper and lower layers of the circuit is 100%, and the on-resistance is less than 20 milliohms.
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Abstract
The invention discloses a fabrication method of a multi-layer package substrate with a thick dielectric-layer thin film. The fabrication method comprises the following steps of 1) coating a non-photosensitive dielectric material glue solution on a ceramic circuit board by a method of spin-coating or coating for one or more times, and performing baking to make a large part of solvent volatilized even partially cured; 2) performing impressing and further baking by an impressing template, wherein the impressing template employs transparent glass as a substrate, a chromium-gold metal layer is sputtered onto an impressing surface of the template, the impressing template employs a SU-8 glue post as an impressing head, and the height of the SU-8 glue is higher than the thickness of the coated dielectric layer by 20-60 micrometers; 3) demoulding and thoroughly curing; 4) performing integral plasma etching; 5) fabricating a bottom-layer thin film circuit on the dielectric layer; and 6) repeating the steps of 1) to 5), and fabricating other layers of thin film circuits. By the method, an expensive photosensitive dielectric material is not needed, no mask is needed to be fabricated and etched, the steps are reduced compared with an existing process, and the integral process is simple in step.
Description
technical field [0001] The invention relates to a method for manufacturing a thick dielectric layer thin film multilayer encapsulation substrate. Background technique [0002] With the development of informationization and multi-functionalization of intelligent terminals and weapons and equipment, more and more electronic functional modules need to be integrated in a limited space, thus developing the MCM (Multi Chip Model) multi-chip module, SIP (System InPackage ) High-density packaging methods such as system-in-package. These high-seal packaging methods are all supported by high-density packaging substrates, such as co-fired ceramic packaging substrates, thin-film multilayer packaging substrates, co-fired ceramic-thin film multilayer hybrid packaging substrates, and the like. [0003] Thin-film multi-layer packaging substrates have precise wires, high wiring density, small signal delay, and outstanding high-frequency performance. PI (polyimide), BCB (benzocyclobutene), L...
Claims
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IPC IPC(8): H01L21/48
Inventor 王列松薛新忠高永全朱小明陈洋
Owner 苏州华博电子科技有限公司



