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Hybrid non-volatile memory structure and method

A hybrid memory and non-volatile technology, applied in the field of memory, can solve the problems of high consumption of system architecture and reduced transmission data speed

Active Publication Date: 2020-12-08
上海博维逻辑半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

System architecture can consume large area since memory devices are not in the same array layout
Also, it may slow down data transfer from SRAM to NVM

Method used

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  • Hybrid non-volatile memory structure and method
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  • Hybrid non-volatile memory structure and method

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Embodiment Construction

[0021] In the following detailed description, reference is made to the accompanying drawings which form a part hereof. In the drawings, similar symbols typically identify similar components, unless stated otherwise. The illustrative embodiments described in the detailed description and drawings are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented herein. Aspects of the present disclosure, as generally described herein and illustrated in the drawings, can be arranged, substituted, combined, separated and designed in various configurations, all of which are expressly contemplated herein.

[0022] As used herein, NVM memory may include, but is not limited to, floating gate memory devices, SONOS memory devices, resistive RAM (RRAM) devices, phase change memory, ferroelectric memory, magnetic-based memory (e.g., MRAM and STTRAM), DRAM device, one-time programmable...

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Abstract

Techniques for hybrid non-volatile memory structures including multiple SRAM buffers are generally described herein. SRAM access time can be achieved for non-volatile read / write operations by first performing access queue buffered read / write operations. The SRAM buffer can be shared as system SRAM. In other examples, a hybrid non-volatile memory according to some embodiments may include high-speed blocks and high-endurance blocks to store different types of data with different access requirements. Hybrid non-volatile memory may also include normal blocks for storing infrequently changing data.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application Serial No. 62 / 395,581 filed September 16, 2016. The disclosures of the aforementioned applications are incorporated herein by reference. technical field [0003] The present invention relates to memory technology, and more particularly, to a hybrid memory device and a method for operating a hybrid memory device. Background technique [0004] Unless otherwise indicated herein, the materials described in this section are not prior art to the claims in this application and their inclusion in this section is not an admission that the materials are prior art. [0005] Volatile semiconductor memories such as static random access memory (SRAM) or DRAM are used in computer designs due to their relatively low power consumption, speed, and simple operation, while one-time programmable (OTP) memories Non-volatile memory (NVM) such as NVMe, EEPROM, flash ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C14/00
CPCG11C14/0063G11C14/0054G11C8/10G11C11/418G11C16/08G06F2212/1016G06F2212/1028G06F2212/205G06F2212/7203G11C5/025G11C7/18G11C8/08G11C11/419G06F12/0246G06F12/0638G06F13/1694Y02D10/00G11C7/12G11C11/4085G11C14/00
Inventor 骆志炯王澍金晓明
Owner 上海博维逻辑半导体技术有限公司